An inspection method and apparatus comprising, a step of reflecting linearly-polarized light having a predetermined wavelength using an non-polarizing beam splitter after transmitting the linearly-polarized light through a half-wave plate, irradiating a sample with the linearly-polarized light having a polarization plane of a predetermined angle, causing the light reflected by the sample to be incident to an image capturing sensor through a lens, the non-polarizing beam splitter, and an analyzer, and acquiring an optical image of a pattern formed on the sample; acquiring a plurality of optical images by changing an angle of the analyzer or the half-wave plate, and obtaining an angle of the analyzer or the half-wave plate such that a value of (σ/√A) becomes a minimum; and a step of inspecting whether a defect of the pattern exists, wherein the pattern is a repetitive pattern having a period at a resolution limit or less

Inspection method and inspection apparatus

A laser mask is disclosed. In one embodiment, the laser mask includes: a mask substrate including i) at least one light transmission portion configured to transmit light therethrough and ii) a plurality of light interruption portions separated by the light transmission portion interposed therebetween. The light interruption portions are configured to block light; and a plurality of protrusion and depression regions positioned on the light interruption portions of the mask substrate. The protrusion and depression regions comprise a plurality of concave portions and a plurality of convex portions which are alternately formed.

Laser mask and sequential lateral solidification crystallization method using the same

A mask inspecting apparatus and method of inspecting a mask having a plurality of openings used in deposition in a desired pattern, the mask inspecting apparatus capable of detecting a defect of the mask through the openings of the mask. The mask inspecting apparatus includes: a detection unit detecting boundary line of each of the openings of the mask; a storage unit storing information about a member on which deposition is to be performed using the mask; a setting unit setting a first boundary line, a second boundary line, and a safety area for each of the openings using the stored information about the member on which deposition is to be performed, wherein the first boundary line forms an outline of a deposition area, the second boundary line surrounds the first boundary, and the safety area is interposed between the first boundary line and the second boundary line; and a control unit determining whether the boundary line of the mask detected by the detection unit does not contact the first boundary line and the second boundary line and whether it is present in the safety area.

Apparatus and method of inspecting mask

PROBLEM TO BE SOLVED: To provide a stencil mask for ion implantation, which is used in an ion implantation process in the manufacture of a semiconductor device, has excellent ion irradiation resistance, and stably carries out high precision and high purity ion implantation for a long period of time. SOLUTION: This stencil mask for the ion implantation is used in the ion implantation process in the manufacture of the semiconductor device, and comprises at least a substrate portion and a stencil portion, and the stencil portion has a diamond layer. COPYRIGHT: (C)2005,JPO&NCIPI

Stencil mask for ion implantation, and formation method thereof

PROBLEM TO BE SOLVED: To provide an electron beam detector and an electron beam drawing technology using it wherein an effective range of an opening pattern on a scattered body is made large and drawing with a high precision is possible SOLUTION: By fabricating a plurality of scattered bodies 102 and a plurality of corresponding limiting stops 105, 106 in the same shape, and by laminating them by using a positioning mechanism 109, the electron beam detector is constituted This detector is mounted on the electron beam drawing device, measurement of a beam profile is carried out, and a feed back is carried out to an electronic optical system COPYRIGHT: (C)2005,JPO&NCIPI

Electron beam detector and its manufacturing method, and electron beam drawing device using it

PROBLEM TO BE SOLVED: To provide a pattern defect classification method and a pattern defect classification device for classifying and quantitating a pattern defect highly accurately at high speed. SOLUTION: This method for determining and classifying the kind of a mask defect is described as follows: an image of design data used for manufacture of the mask (1) and an image of an inspection object mask are acquired; the pattern position of the inspection object mask and an inspection range are set (23); the area ratio of the mask image to the design data image is calculated in the inspection range (24); the pattern circularity of the image of the inspection object mask is calculated (27); and each coordinate of the center of gravity of each pattern of the image of the design data and the image of the inspection object mask is calculated respectively (33). This defect classification device for executing the method is also provided. COPYRIGHT: (C)2006,JPO&NCIPI

Defect classification method and device of mask

PROBLEM TO BE SOLVED: To provide an electron beam exposure mask which is free of contamination and on which an aperture for electron beam lithography and a mask holder are aligned with each other with superior accuracy. SOLUTION: An aperture 10 for electron beam lithography, in which a transfer mask opening pattern 5a of a transfer mask, a support frame 1a, a transfer mask opening section 7, a holding frame 1b, and a recessed section pattern 8 for positioning formed between the frames 1a and 1b is manufactured by working a laminated silicon substrate. A projecting section pattern 21 for positioning and a conductive layer 23 are formed on the holding member 21 of a mask holder 20. Then an electron beam exposure mask 100 is obtained by pasting an aperture 10 to the mask holder 20, using the projecting section pattern 21 as a guide and adhering and fixing the holding frame 1b of the aperture 10 to the holding member 21 of the mask holder 20 through pressing and heating.

Aperture for electron beam lithography, mask holder, and electron beam exposure mask using them

PROBLEM TO BE SOLVED: To provide a transfer mask of which a resolution is high without increasing energy of electron beams even in case of a pattern with high precision and a complicated shape, and which can be exposed without requiring a complementary mask SOLUTION: In an electron beams exposure transfer mask having a region which is sectioned into a plurality of parts, there exist a sectioned region A where an electron beams scattered film formed with a transfer pattern is provided on an electron beams transmission film having no transmission holes, and a sectioned region B where the electron beams scattered film formed with the transfer pattern is provided on the electron beams transmission film having the transmission holes Further, its manufacturing method, an electron beam, exposure method and an electron beam exposure system are provided

Electron beam exposure transfer mask, its manufacturing method, electron beam exposure method and electron beam exposure system

PROBLEM TO BE SOLVED: To provide a mask for charged particle beam exposure capable of performing automatic focus even in a mask of a multilayer film structure and highly accurately measuring mask distortion, and an inspection method thereof. SOLUTION: The mask for charged particle beam exposure is provided with a strut section having a beam structure, a membrane section provided on the main surface of the strut section and consisting of a first thin film formed in such a way that a pattern to be transferred onto a substrate is divided into a plurality of collective exposure small regions, an intermediate layer made of a second thin film provided between the membrane section and the strut section, and a position mark provided on the main surface of the strut section. In the mask, the position mark has an eliminating section in which the first and second thin films are eliminated, and a projecting section having a laminate structure consisting of the first and second thin films, and the center point of the position mark is positioned at the eliminating section. COPYRIGHT: (C)2006,JPO&NCIPI

Mask for charged particle beam exposure and mask inspection method

PROBLEM TO BE SOLVED: To provide a manufacturing method of a stencile mask for ion implantation, having excellent heat resistance, durability and ion implantation accuracy by reducing a critical defect of a stencile mask for ion implantation such as deformation of a membrane due to heat generated from an ion beam in an ion implantation process using the stensile mask for ion implantation to be executed in manufacture of semiconductor devices. SOLUTION: The manufacturing method of the stencile mask for ion implantation includes a step of forming a first thin-film layer 22 and a second thin-film layer 23 on at least one surface of a supporting layer 21 in this order; a step of forming an opening 26 on the other surface of the supporting layer 21; and a step of forming a through hole pattern 128 for ion implantation on the second thin-film layer 23, and then, forming a through hole pattern 229 for ion implantation on the first thin-film layer 22, using the second thin-film layer 23 as an etching mask. COPYRIGHT: (C)2008,JPO&INPIT

Tamura Akira

Papers

Defect classification method and device of mask

Aperture for electron beam lithography, mask holder, and electron beam exposure mask using them

Electron beam exposure transfer mask, its manufacturing method, electron beam exposure method and electron beam exposure system

Mask for charged particle beam exposure and mask inspection method

Manufacturing method of stencile mask for ion implantation