An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.

https://science.sciencemag.org/content/sci/321/5891/936.full.pdf

Density multiplication and improved lithography by directed block copolymer assembly

Directing the self-assembly of block copolymers

The nanometer-scale architectures in thin films of self-assembling block copolymers have inspired a variety of new applications. For example, the uniformly sized and shaped nanodomains formed in the films have been used for nanolithography, nanoparticle synthesis, and high-density information storage media. Imperative to all of these applications, however, is a high degree of control over orientation of the nanodomains relative to the surface of the film as well as control over order in the plane of the film. Induced fields including electric, shear, and surface fields have been demonstrated to influence orientation. Both heteroepitaxy and graphoepitaxy can induce positional order on the nanodomains in the plane of the film. This article will briefly review a variety of mechanisms for gaining control over block copolymer order as well as many of the applications of these materials. Particular attention is paid to the potential of perfecting long-range two-dimensional order over a broader range of length scales and the extension of these concepts to functional materials and more complex architectures.

/pdf/patterning-with-block-copolymer-thin-films-5gldelhkf5.pdf

Patterning with block copolymer thin films

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Nonvolatile semiconductor memory device and method for manufacturing same

A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

Method for manufacturing porous structure and method for forming pattern

A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

Light-emitting device and method for manufacturing the same

Block copolymers are known to generate nanoscale microdomains by microphase separation, if they are annealed at a temperature lower than their order-disorder transition temperatures. We attempted to transfer the microdomains onto substrates by only using the reactive-ion etching (RIE) method, which is widely used in semiconductor manufacturing processes. Block copolymers consisting of an aromatic polymer and an acrylic polymer were used since there is a large difference in the dry-etch resistance, in that only the acrylic polymer was selectively etched by RIE. Furthermore, nanometer-scale dot patterns can be easily obtained on the substrates by the continuous RIE process. Dot patterns of arbitrary diameters could be transferred to silicon wafers, glass substrates and so forth using these materials and processes.

https://iopscience.iop.org/article/10.1143/JJAP.41.6112/pdf

Nanopatterning with Microdomains of Block Copolymers using Reactive-Ion Etching Selectivity

We have produced metal wire grids with 33nm periodicity, using a thin film of a self-assembling diblock copolymer as a template. These grids, supported on fused quartz wafers, function as transmission polarizers for visible and near-ultraviolet lights. Their polarization efficiency is measured to be near 50% in the visible. Quantitative comparison with a new theoretical analysis of such wire grids indicates that they should perform well into the far UV. This analysis also explains the reversal in polarization direction at shorter wavelengths which we observe in our specimens.

Koji Asakawa

Papers

Nonvolatile semiconductor memory device and method for manufacturing same

Method for manufacturing porous structure and method for forming pattern

Light-emitting device and method for manufacturing the same

Nanopatterning with Microdomains of Block Copolymers using Reactive-Ion Etching Selectivity

Aluminum nanowire polarizing grids: Fabrication and analysis