Showing papers by "Kostya S. Novoselov published in 1998"
TL;DR: In this paper, features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current.
Abstract: Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N−GaAs/Al0.4Ga0.6As/Al0.03Ga0.97As/N−GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N−GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N−GaAs interface and in the second case — from the Al0.4Ga0.6As barrier and the potential gradient at the N−GaAs/N+GaAs junction, reflection from which is likewise coherent.
2 citations