Ksenia A. Fedorova

TL;DR: A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated.

Abstract: A high-power sub-60 fs mode-locked diode-pumped Yb:KGW laser based on hybrid action of an InGaAs quantum-dot saturable absorber mirror and Kerr-lens mode locking was demonstrated. The laser delivered 56 fs pulses with 1.95 W of average power corresponding to 450 kW of peak power. The width of the generated laser spectrum was 20.5 nm, which was near the gain bandwidth limit of the Yb:KGW crystal. To the best of our knowledge, these are the shortest pulses generated from the monoclinic double tungstate crystals (and Yb:KGW laser crystal in particular) and the most powerful in the sub-60 fs regime. At the same time, they are also the shortest pulses produced to date with the help of a quantum-dot-based saturable absorber. High-power operation with a pulse duration of 90 fs and 2.85 W of average output power was also demonstrated.

TL;DR: In this paper, a review of the recent advances in the field of ultrashort pulse generation from optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs) is presented.

TL;DR: In this paper, the hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated.

TL;DR: This is the first report on a passively mode-locked femtosecond Alexandrite laser using an InP/InGaP quantum-dot semiconductor saturable absorber mirror in general and a QD-SESAM in particular.