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Igor Krestnikov
Researcher at Technical University of Berlin
Publications - 179
Citations - 3987
Igor Krestnikov is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot laser & Quantum dot. The author has an hindex of 33, co-authored 176 publications receiving 3849 citations.
Papers
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Journal ArticleDOI
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
Victor M. Ustinov,Nikolay A. Maleev,A. E. Zhukov,A. R. Kovsh,A. Yu. Egorov,A. V. Lunev,B. V. Volovik,Igor Krestnikov,Yu. G. Musikhin,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg +13 more
TL;DR: In this article, the lateral size of InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases.
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The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
Sasan Fathpour,Zetian Mi,P. K. Bhattacharya,A. R. Kovsh,S. S. Mikhrin,Igor Krestnikov,A. V. Kozhukhov,N. N. Ledentsov +7 more
TL;DR: In this paper, a self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped laser and to analyze the measured data.
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High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
S. S. Mikhrin,A. R. Kovsh,Igor Krestnikov,A. V. Kozhukhov,D.A. Livshits,N. N. Ledentsov,Yu. M. Shernyakov,Innokenty I. Novikov,Mikhail V. Maximov,V. M. Ustinov,Zh. I. Alferov +10 more
TL;DR: In this paper, GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) laser with high CW output power (5 W) and wall-plug efficiency (56%) was demonstrated.
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Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix
M. Strassburg,V. Kutzer,U. W. Pohl,Ary A. Hoffmann,I. Broser,N. N. Ledentsov,Dieter Bimberg,Andreas Rosenauer,U. Fischer,Dagmar Gerthsen,Igor Krestnikov,Mikhail V. Maximov,P. S. Kop’ev,Zh. I. Alferov +13 more
TL;DR: By inserting stacked sheets of nominally 0.7 monolayer CdSe into a ZnSe matrix, a region with strong resonant excitonic absorption was created as mentioned in this paper.
Journal ArticleDOI
Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth
F. Hopfer,Alex Mutig,Matthias Kuntz,Gerrit Fiol,Dieter Bimberg,N. N. Ledentsov,Vitaly Shchukin,S. S. Mikhrin,D. L. Livshits,Igor Krestnikov,A. R. Kovsh,N. D. Zakharov,Peter Werner +12 more
TL;DR: In this article, a singlemode vertical-cavity surface-emitting laser based on dense arrays of stacked sub-monolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz.