In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

The intrinsic thermal conductivity of AIN

Progress and prospects for GaN and the III–V nitride semiconductors

Phase relationships in the SiC-AlN system were determined by analytical electron microscopy of local equilibria among adjacent phases in hot-pressed samples and in diffusion couples. At 2100° to 2300°C, a 4H–2H equilibrium exists, the 4H field extending from ∼2 mol% AlN to an upper limit of 11 to 14 mol% AlN. The wurtzite-type 2H (δ) solid solution extends from an impurity-sensitive lower limit of 17 to 24 mol% AlN up to 100 mol% AlN. Semiquantitative Auger electron spectroscopy and energy dispersive X-ray spectroscopy ultrathin-window detector measurements confirmed the assumption that the solid solutions have the general formula (SiC)1-x(AlN)x and belong to the SiC-AlN pseudobinary system. The existence of a miscibility gap below 1950°C was confirmed, but its limits were not determined accurately. A faulted metastable cubic phase, β′, exists below ∼2000°C and contains up to ∼4 mol% AlN. The transformations into the stable a structures occur through diffusion-controlled stacking rearrangements.

Phase Relationships in the Silicon Carbide-Aluminum Nitride System

Dense samples of several compositions in the system SiC-AIN were fabricated by hot-pressing. The SiC-AIN powder was prepared by carbothermal reduction of an intimate mixture of alumina, silica, and carbon in a nitrogen atmosphere. X-ray diffraction and electron and optical microscopy were used to determine the chemical and microstructural characteristics of the hot-pressed specimens. Materials with bulk compositions between 15 and 75 wt% AIN were found to be nonhomo-geneous when hot-pressed below 2100°C. These materials were determined to be a mixture of SiC-AIN solid solutions with different compositions. The observed compositional variations were distinctly bimodal. The source of the in-homogeneity was the starting SiC-AIN powder. The powders, as well as the hot-pressed samples, consisted of a mixture of small crystals rich in SiC and large AIN-rich crystals. Compositions outside the 15 to 75 wt% AIN region were found to be single phase and to have the wurtzite structure. Hot-pressing SiC-AIN in the intermediate composition range at 2300°C produced an optically and chemically homogeneous material. The precipitation of an SiC-rich phase from a 75 wt% AIN solid solution and the precipitation of an AIN-rich phase from a 47 wt% AIN alloy when annealed at 1700°C are strong indications that a miscibility gas exists in the system SiC-AIN.

Investigation of Phase Stability in the System Sic‐AlN

SiC-AIN alloys were prepared by the carbothermal reduction of silica and alumina, derived from an intimate mixture of silica, aluminium chloride and starch. The resulting single-phase SiC-AIN powder was hot-pressed without additives to a high density. The dense bodies had a fine-grained uniform microstructure. The Young's elastic modulus, microhardness, fracture toughness, thermal expansion and thermal conductivity were measured as functions of composition. The creep behaviour of the SiC-AIN alloy was compared with that of silicon carbide.

Kurn Cho

Papers

Fabrication and characterization of SiC-AIN alloys

Fabrication and Characterization of SiC-AlN Alloys,