K
Kurt A. Shalkhauser
Researcher at Glenn Research Center
Publications - 22
Citations - 134
Kurt A. Shalkhauser is an academic researcher from Glenn Research Center. The author has contributed to research in topics: Communications satellite & Flight test. The author has an hindex of 5, co-authored 22 publications receiving 132 citations.
Papers
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Journal ArticleDOI
High-speed fiber-optic links for distribution of satellite traffic
TL;DR: In this article, the design aspects of a fiber-optic link satisfying the distribution requirements of satellite data traffic are presented in terms of reactively matched optical transmitter and receiver modules.
Patent
Universal nondestructive MM-wave integrated circuit test fixture
TL;DR: An MMIC test fixture includes a bias module having springloaded contacts which electrically engage pads on a chip carrier disposed in a recess of a base member RF energy is applied to and passed from the chip carrier by chamfered edges of ridges in the waveguide passages of housings which are removably attached to the base member as mentioned in this paper.
Journal ArticleDOI
Experimental and theoretical study of parasitic leakage/resonance in a K/Ka-band MMIC package
TL;DR: In this article, the effect of adding resistive coating to the inside surface of the package lid and also the use of dielectric packaging materials with very high loss tangent are studied in view of the suppression of the spurious resonances.
Control and Non-Payload Communications (CNPC) Prototype Radio - Generation 2 Security Flight Test Report
TL;DR: The flight test was the first to integrate Robust Header Compression (ROHC) as a means of reducing the additional overhead introduced by the security controls and Mobile IPv6 and demonstrated the complete end-to-end secure CNPC link in a relevant flight environment.
Journal ArticleDOI
Submicron-gate InP power MISFET's with improved output power density at 18 and 20 GHz
M.D. Biedenbender,V.J. Kapoor,Kurt A. Shalkhauser,L.J. Messick,R. Nguyen,D. Schmitz,H. Jurgensen +6 more
TL;DR: In this article, the microwave characteristics at 18 and 20 GHz of submicron-gate indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs) for high output power density applications are presented.