Kwan Hong Min

TL;DR: There is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm, suggesting a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunnelsite upon thermal annealing.

TL;DR: Analysis of the hydrogen incorporation, microstructure, and deposition mechanism indicate that in plasma-enhanced chemical vapor deposition (PECVD) deposition, although the increase of substrate temperature reduces the hydrogen content, it risks the increased of porosity and molecular-hydrogen trapping, resulting in even more severe blistering.

TL;DR: In this article, experiments have confirmed that solar cells with a silicon oxide (SiO2) film have a lower efficiency than solar cells without a SiO2 film at low illumination.

TL;DR: A nickel-catalyzed reductive coupling of alkynes and amides, followed by base-free transmetalation, proceeded selectively in the presence of an uncommon bidentate primary aminophosphine ligand to access highly functionalized indoles comprising biologically important trifluoromethyl groups and challenging electron-rich alkenyl groups at the 2- and 3-positions, respectively.

TL;DR: In this paper, the passivation characteristics of Al2O3 layers deposited by PA-ALD were investigated with various O2 plasma exposure times, and the growth per cycle was saturated at approximately 1.4