L
L. Didukh
Researcher at National Technical University
Publications - 31
Citations - 109
L. Didukh is an academic researcher from National Technical University. The author has contributed to research in topics: Hubbard model & Metal–insulator transition. The author has an hindex of 6, co-authored 31 publications receiving 103 citations. Previous affiliations of L. Didukh include Ternopil Ivan Pul'uj National Technical University.
Papers
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Metal-insulator transition in a doubly orbitally degenerate model with correlated hopping
TL;DR: In this paper, a doubly orbitally degenerate narrow-band model with correlated hopping is proposed, which takes into account the matrix element of electron-electron interaction, which describes intersite hoppings of electrons.
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Ground-state ferromagnetism in a doubly orbitally degenerate model
TL;DR: In this paper, the ground state of a double orbitally degenerate model at weak intra-atomic interaction is studied using the Green functions method, which includes correlated hopping integrals and inter-atomic exchange interaction.
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Mott Transition, Ferromagnetism and Conductivity in the Generalized Hubbard Model
TL;DR: In this article, the electron correlations in narrow energy bands are examined within the framework of the Hubbard model, generalized by taking into account the correlated hopping of electrons Electronic conductivity and ferromagnetic ordering stabilization in the system with various forms of electronic density of states are studied.
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Itinerant ferromagnetism of systems with double orbital degeneracy
TL;DR: In this paper, the ground state ferromagnetism in a doubly orbitally degenerate Hubbard model was studied by taking into account correlated hopping and inter-atomic exchange interaction.
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Electron correlations in narrow energy bands: modified polar model approach
TL;DR: In this paper, the effect of strong Coulomb correlation, interatomic exchange and correlated hopping of electrons and explain some peculiarities of the properties of narrow-band materials, namely the metal-insulator transition with an increase of temperature, nonlinear concentration dependence of Curie temperature and peculiarity of transport properties of electronic subsystem.