A design is described for an infrared sensing MOSFET (IRFET). The high-gain high-resolution dc or static readout and inherent integrating and memory characteristics of the infrared sensing MOSFET should make it ideal for infrared imaging and target tracking applications employing a large-scale integrated array. The devices are based on silicon MOSFET technology where large-scale integrated arrays are routinely fabricated.

Design for silicon infrared sensing MOSFET

The performance of a television camera using the one-inch pyroelectric vidicon has been measured. The results are compared with an analysis which attempts to identify the factors limiting the performance of the system. Two modes of operation are considered; chopping the incident radiation with a shutter and panning the camera. The measurements indicate that the camera panning mode produces the better performance. At low spatial frequency a scene temperature difference of 0.2°C may be detected.

Performance of the pyroelectric vidicon for thermal imaging in the 8&#8212;14 micron band

Switching speeds of MOS inverters

The performance of a television camera using the one inch pyroelectric vidicon has been measured, and compared with an analysis which attempts to identify the factors limiting the performance of the system.

The performance of the pyroelectric vidicon for thermal imaging in the 8-14 micron band

The fabrication and performance of n-channel ion-implanted, TTL compatible, enhancement/depletion MOSFET devices and circuits are described. A speed-power product of 10.0 pJ/pF has been experimentally observed.

L. Forbes

Papers

N-channel ion-implanted enhancement/depletion MOSFET's