Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.

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A review of SiC power module packaging: Layout, material system and integration

As an increasing attention towards sustainable development of energy and environment, the power electronics (PEs) are gaining more and more attraction on various energy systems. The insulated gate bipolar transistor (IGBT), as one of the PEs with numerous advantages and potentials for development of higher voltage and current ratings, has been used in a board range of applications. However, the continuing miniaturization and rapid increasing power ratings of IGBTs have remarkable high heat flux, which requires complex thermal management. In this paper, studies of the thermal management on IGBTs are generally reviewed including analyzing, comparing, and classifying the results originating from these researches. The thermal models to accurately calculate the dynamic heat dissipation are divided into analytical models, numerical models, and thermal network models, respectively. The thermal resistances of current IGBT modules are also studied. According to the current products on a number of IGBTs, we observe that the junction-to-case thermal resistance generally decreases inversely in terms of the total thermal power. In addition, the cooling solutions of IGBTs are reviewed and the performance of the various solutions are studied and compared. At last, we have proposed a quick and efficient evaluation judgment for the thermal management of the IGBTs depended on the requirements on the junction-to-case thermal resistance and equivalent heat transfer coefficient of the test samples.

Thermal Management on IGBT Power Electronic Devices and Modules

Optimization and comparison of double-layer and double-side micro-channel heat sinks with nanofluid for power electronics cooling

A power electronic package includes: first and second high thermal conductivity insulating non-planar substrates; and multiple semiconductor chips and electronic components between the substrates. Each substrate includes multiple electrical insulator layers and patterned electrical conductor layers connecting to the electronic components, and further includes multiple raised regions or posts, which are bonded together so that the substrates are mechanically and electrically connected. The number, arrangement, and shape of the raised regions or posts are adjusted to have mechanical separation between the substrates. The electrical conductor layers are separated and isolated one another so that multiple electric circuits are provided on at least one of the substrates.

Power electronic package having two substrates with multiple semiconductor chips and electronic components

Electronics cooling research has been largely focused on high heat flux removal from computer chips in the recent years. However, the equally important field of high-power electronic devices has been experiencing a major paradigm shift from air cooling to liquid cooling over the last decade. For example, multiple 250-W insulated-gate bipolar transistors used in a power drive for a 7000-HP motor used in pumping or in locomotive traction devices would not be sufficiently cooled with air-cooling techniques. Another example is a “hockey puck” SCR of 63 mm diameter used to drive an electric motor that could dissipate over 1500 W and is difficult to cool with air because of the shape of the device. Other devices include radio-frequency generators, industrial battery chargers, printing press thermal and humidity control equipment, traction devices, mining devices, crude oil extraction equipment, magnetic resonance imaging, and railroad engines. This article classifies the cold plates into four types: formed tube...

Liquid Cooled Cold Plates for Industrial High-Power Electronic Devices—Thermal Design and Manufacturing Considerations

A new technique for the packaging of IGBT modules has been developed. The components are sandwiched between two direct bond copper (DBC) substrates with aluminum nitride. Wire bonds are replaced with flip chip solder bumps, which allows cooling of components on both sides. Microchannel heat sinks are directly integrated in the package to decrease the thermal resistance of the module. Thus, a very compact module with high thermal performance is obtained. A prototype with two insulated gate bipolar transistors (IGBTs) and four diodes associated in parallel was realized and tested. In this paper, the innovative packaging technique is described, and results of thermal tests are presented.

L. Meysenc

Papers

Double-sided cooling for high power IGBT modules using flip chip technology