Industries such as the automotive, aerospace or military, as well as environmental and biological research have promoted the development of ultraviolet (UV) photodetectors capable of operating at high temperatures and in hostile environments. UV-enhanced Si photodiodes are hence giving way to a new generation of UV detectors fabricated from wide-bandgap semiconductors, such as SiC, diamond, III-nitrides, ZnS, ZnO, or ZnSe. This paper provides a general review of latest progresses in wide-bandgap semiconductor photodetectors.

https://iopscience.iop.org/article/10.1088/0268-1242/18/4/201/pdf

Wide-bandgap semiconductor ultraviolet photodetectors

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.

https://science.sciencemag.org/content/sci/297/5587/1670.full.pdf

High carrier mobility in single-crystal plasma-deposited diamond.

J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons

/pdf/ultrawide-bandgap-semiconductors-research-opportunities-and-49ev1zu2ym.pdf

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Diamond as an electronic material

Hydrogen-terminated diamond surfaces and interfaces

1: Electronic and Vibrational Properties of Bulk Diamond C.Y. Fong, B.M. Klein. 2: Diamond Surface B. Pate. 3: Growth of CVD Diamond for Electronic Applications L.S. Plano. 4: Doped Diamonds K. Okano. 5: Defects in Diamond W. Zhu. 6: Free Carrier Dynamics in Diamond S. Han, L.S. Pan, D.R. Kania. 7: Thermal Conductivity of Diamond J.E. Graebner. 8: Electrical Contacts to Diamond T. Tachibana, J. Glass. 9: Electronic Device Processing M.A. Plano. 10: Passive Diamond Electronic Devices D.L. Freifus. 11: Active Diamond Electronic Devices S. Grot. Appendix: Table A1. Properties of Semiconductors at 293 K. Index.

Diamond : electronic properties and applications

Diamond radiation detectors

Device properties of homoepitaxially grown diamond

Electrical characteristics associated with radiation detection were measured on single‐crystal natural type‐IIa diamond using two techniques: charged particle‐induced conductivity and time‐resolved transient photoinduced conductivity. The two techniques complement each other: The charged particle‐induced conductivity technique measures the product of the carrier mobility μ and lifetime τ throughout the bulk of the material while the transient photoconductivity technique measures the carrier mobility and lifetime independently at the first few micrometers of the material surface. For each technique, the μτ product was determined by integration of the respective signals. The collection distance that a free carrier drifts in an electric field was extracted by each technique. As a result, a direct comparison of bulk and surface electrical properties was performed. The data from these two techniques are in agreement, indicating no difference in the electrical properties between the bulk and the surface of the material. The collection distance continues to increase with field up to 25 kV/cm without saturation. Using the transient photoconductivity technique the carrier mobility was measured separately and compared with a simple electron‐phonon scattering model. The general characteristics of carrier mobility, lifetime, and collection distance at low electric field appear to be adequately described by the model.

Particle- and photoinduced conductivity in type-IIa diamonds

Photoconductive devices have been fabricated from type IIa diamonds. The sensitivity of these devices is independent of photon energy from 200 to 2200 eV. The dynamic range is 105. The large band gap of the diamond greatly reduces the sensitivity to photons with an energy less than 5.5 eV which is an attractive feature for many applications. The carrier lifetime in the material is 90 ps and the mobility is 1650 cm2/V/s at 106 V/m.

L. S. Pan

Papers

Diamond : electronic properties and applications

Diamond radiation detectors

Device properties of homoepitaxially grown diamond

Particle- and photoinduced conductivity in type-IIa diamonds

Absolute x‐ray power measurements with subnanosecond time resolution using type IIa diamond photoconductors