Showing papers by "Lakhdar Dehimi published in 2016"
TL;DR: In this article, the simulation of the Schottky diode was performed using the appropriate physical models to explain the behavior of the physical phenomena of the diode and the results strongly suggest that the spatial inhomogeneities at the MS interface did not affect the I-V and C-V characteristics in the simulated temperature range.
Abstract: We report the simulation of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-InP Schottky contact in the temperature range of 200–400 K by steps of 20 K with and without interface states, traps and tunnelling current The simulation was carried out using Atlas-Silvaco-Tcad device simulator The simulation is performed using the appropriate physical models to explain the behaviour of the physical phenomena of the Schottky diode The simulation results of I–V–T and C–V–T without native oxide, tunnelling current and traps are far away from experimental data Thus, native oxide, tunnelling current and traps should be considered Our results strongly suggest that the spatial inhomogeneities at the MS interface did not affect the I–V and C–V characteristics in the simulated temperature range In addition, the extracted parameters, zero-bias barrier height , capacitance barrier height and the ideality factor were found to be strongly temperature-dependent due to the deviation o
10 citations