A method comprising depositing on an insulating base conductive materials forming the passive elements of said electrical circuit and conductors extending thereto, and depositing on said insulating base at least one layer of semiconductor material forming said semiconductor device which electrically connects with at least one of said conductors.

Film deposited circuits and devices therefor

Method and apparatus for providing a photon conversion device including a first layer for photon absorption, and a second layer for photon emission wherein the first layer is separate from the second layer, wherein the first and second layers enable excited electrons and holes to move from the first layer to the second layer and recombine in the second layer.

Methods and apparatus for wavelength conversion in solar cells and solar cell covers

A nonlinear optical medium wherein the optical index of refraction is a function of the intensity of light irradiating the medium, is employed in various devices to affect at least a portion of an incoming light beam by refracting or reflecting that portion of the light and thereby reduce the amount of light falling on an object. The nonlinear optical medium is employed in a resonator optical bistable device, in a self-bending approach and in a self-defocusing approach to provide the protective function. The spatial profile of light intensity of the incoming light can be shaped prior to the incoming light irradiating the nonlinear medium or the nonlinear medium itself can be shaped to provide the path altering function. A laser hardened device with ultra fast switching time, a large dynamic range and passive operation is a preferred application of the present invention.

Means and method for reducing the amount of light irradiating an object

Semiconductor gunn effect switching element

A Gunn-effect device in which the active layer of the semiconductor body is provided with a suitable recess, hole or opening which extends through the active layer in a direction perpendicular to the direction of drift movement of the charge carriers. Preferably at least one contact is provided within the bore which cooperates with another contact disposed on the opposite edge of the active layer. The active layer of the semiconductor body may, for example, be circular, rectangular or oval, and may if desired include a plurality of pairs of contacts, one contact of each pair being within the hole and the other contact being on the edge of the active layer.

Controlled gunn-effect device

Voltage controlled variable frequency gunn-effect oscillator

The beam deflector is formed of a body of n-type gallium arsenide. Ohmic contacts are made at opposite ends of the body. The doping concentration (no) and the length (l) of the body are such that the nol product is less than the critical value for inherent bulk oscillations. A voltage above a threshold value applied to the body produces a field gradient across the body. This field gradient produces a gradient in index of refraction for light at energies close to the band gap of the gallium arsenide. The source of light to be deflected is a gallium arsenide injection laser which emits light at less than band gap energy. The laser beam is passed through the gallium arsenide deflector and deflected under the control of voltages applied across the ohmic contacts.

Electric field gradient beam deflector

A photon emitter which converts carriers from a low energy to a higher energy comprises a semiconductor body with a graded bandgap intrinsic conductivity region with an electric field impressed thereacross which causes electron or hole carriers under the influence of the electric field to move from a low energy gap region of the semiconductor body to a region that has a wider energy gap where recombination will produce a higher energy photon. The structure is useful in image conversion and electroluminescent detector applications.

Lanza Conrad

Papers

Voltage controlled variable frequency gunn-effect oscillator

Electric field gradient beam deflector

Photon emitters and image converters comprising photon emitters.

Solid state oscillator having large microwave output