A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

The present invention pertains to methods for forming a metal diffusion barrier on an integrated circuit wherein the formation includes at least two operations. The first operation deposits barrier material via PVD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material and simultaneously etches a portion of the barrier material deposited in the first operation. The result of the operations is a metal diffusion barrier formed in part by net etching in certain areas, in particular the bottom of vias, and a net deposition in other areas, in particular the side walls of vias. Controlled etching is used to selectively remove barrier material from the bottom of vias, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.

Method of depositing a diffusion barrier for copper interconnect applications

A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

Method for producing ultra-thin tungsten layers with improved step coverage

The present invention relates to a cobalt electroless plating bath composition and method of using it for microelectronic device fabrication. In one embodiment, the present invention relates to cobalt electroless plating in the fabrication of interconnect structures in semiconductor devices.

Electroplating bath composition and method of using

The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.

Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence

Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.

Seed layer repair method

The present invention provides inter alia copper electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention contain an increased brightener concentration that can provide effective copper plate on difficult-to-plate aperture walls, including high aspect ratio, small diameter microvias.

Electrolytic copper plating solutions

The present invention provides methods for the use of copper electroplating compositions. Electroplating compositions of the invention contain an increased brightener concentration that can provide effective copper plate on difficult-to-plate aperture walls, including high aspect ratio, small diameter microvias.

Electrolytic copper plating method

Disclosed are methods for determining the quantity of leveler in an electroplating bath in the presence of other organic additives, such as accelerators, brighteners and suppressors. Such methods are fast, work over a broad concentration range of components and can be performed in real-time.

Plating bath analysis

PROBLEM TO BE SOLVED: To provide a plating bath and a method for improving deposition of a metal on a substrate by including heteroatom-containing organic compounds in the plating bath that prevent the degradation of plating bath components. SOLUTION: The metal plating bath prevents degradation of an additive, by adding the heteroatom compounds that prevent or inhibit the consumption of metal plating bath additives, into the plating bath. The additive consumption inhibiting compounds causes a plating bath having a long life, and a uniform, high brightness metal layer with good physical-mechanical properties on a substrate. The method for plating the metal involves passing current through two electrodes immersed in the bath which contains a dissolved plating metal, the bath additive, and/or further the additive consumption inhibiting compounds, to metal-plate the substrate to a desired thickness. COPYRIGHT: (C)2003,JPO

Leon R. Barstad

Papers

Seed layer repair method

Electrolytic copper plating solutions

Electrolytic copper plating method

Plating bath analysis

Plating bath and method for depositing metal layer on substrate