An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Aspects of the invention provide a transflective liquid crystal display device that prevents display failure, such as an afterimage and unevenness like stains, and achieves a bright display with a wide viewing angle in both transmissive display and reflective display. The liquid crystal display device of the invention is a vertically-aligned transflective liquid crystal display device having a multigap structure. Each pixel can include, in a dot region, a plurality of islands, and connecting portions for electrically connecting the adjoining islands. Two islands, of the islands, can be disposed in a transmissive display region, and the remaining island is disposed in a reflective display region. A boundary sloping area in which the thickness of a liquid crystal layer continuously changes is disposed right below the connecting portion in the pixel electrode.

Liquid crystal device and electronic apparatus

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Disclosed are an LCD device and a method of manufacturing the same, in which a passivation layer and a pixel electrode are simultaneously formed by a single mask process using a half tone mask, and thus, manufacturing efficiency increases, and a defective contact due to loss of the pixel electrode can be prevented in a pad area. The LCD device includes a pad part including a pad area and a contact area. The LCD device includes a pixel pad formed in the pad area, a pixel bar formed in the contact area, and a bridge layer contacting the pixel pad with the pixel bar. The bridge layer is formed as a single layer or multi layers, and formed of one or more of a transparent conductive material and an opaque conductive material.

Liquid crystal display device and method for manufacturing the same

A curved display device curved in a first direction includes: a first substrate including a plurality of signal lines, an insulating layer which covers the signal lines, a pixel electrode disposed on the insulating layer, and a shielding electrode electrically insulated from the pixel electrode and disposed along a signal line, which extends substantially in a second direction crossing the first direction, among the signal lines; a second substrate disposed opposite to the first substrate and including a common electrode; and a light control layer interposed between the first substrate and the second substrate.

Curved display device

PROBLEM TO BE SOLVED: To provide a liquid crystal display device of FFS mode, which can improve a numerical aperture, and to provide a method of manufacturing the same. SOLUTION: The liquid crystal display device has liquid crystal sandwiched between a TFT array substrate having a TFT 50 and a counter substrate disposed opposite the TFT array substrate. The liquid crystal display device has, on the TFT array substrate, a pixel electrode 6 formed directly above or below a drain electrode 5 of a TFT 50 to directly overlap at least partially with the drain electrode 5, an interlayer dielectric 12 covering the pixel electrode 6, and a counter electrode 8 formed on the interlayer dielectric 12 and having a slit for generating a fringe electric field between the pixel electrode 6 and the counter electrode 8. COPYRIGHT: (C)2009,JPO&INPIT

Liquid crystal display device and method of manufacturing the same

PROBLEM TO BE SOLVED: To prevent the phenomenon of the local and deep erosion of a target for supplying thin film raw material of a sputtering apparatus for large-sized substrates for forming thin films on TFT array substrates, etc., of an active matrix type liquid crystal display device using thin-film transistors as switching elements. SOLUTION: A magnet device 32 for applying a magnetic field in a perpendicular direction to the surface of the target arranged in the upper part of a deposition chamber is freely turnably mounted in such a manner that the magnetic poles formed to a rectilinear shape face the target and the device turns within a plane parallel with the target surface. The magnet device is so constituted that the direction of the magnetic poles is a prescribed argument at which the left side end in the advance direction of scanning precedes in the intermediate part of scanning, turns according to the scanning near the terminal part of the target end and attains the direction perpendicular to the scanning direction at the target end. The magnet device scans back and forth in the space where the target is arranged.

Sputtering apparatus for large-sized substrate

PROBLEM TO BE SOLVED: To provide an active matrix substrate which can be manufactured with high reliability and high yield by suppressing the occurrence of poor disconnection or the occurrence of poor connection when mounted SOLUTION: With respect to an active matrix substrate 100, at least a pixel display area 27 wherein a first metallic film forming a gate electrode 2a, a first inter-layer insulating film 4 covering the gate electrode 2a, a semiconductor film 5, a second metallic film forming a source electrode 8, a drain electrode 9, and source wiring 7 for supplying a display signal to the source electrode 8, a second inter-layer insulating film 11, and a pixel electrode 13 connected to the source electrode 8 through a contact hole 12 formed in the second inter-layer insulating film 11 are formed in layers is provided on an insulating substrate 1 Furthermore, source drawing out wiring 18 for drawing out source wiring 7 from the pixel display area 27 for the purpose of display signal input is provided and is formed in the same later as the first metallic film forming the gate electrode 2a COPYRIGHT: (C)2007,JPO&INPIT

Active matrix substrate

PROBLEM TO BE SOLVED: To prevent a defective short-circuit between electrodes caused by a pin hole or a failure of an interlayer insulation film, in an electrooptical device. SOLUTION: At least two or more layers interlayer insulation films 14, 18 which insulate first electrodes such as a gate electrode 2, a storage capacitor common electrode 3, a gate wire 4, a gate terminal 5, a source electrode 9, a drain electrode 10, a source wire 11 and a source terminal 12, and second electrodes such as a pixel electrode 22, a gate terminal pad 23 and a source terminal pad 24 from each other are formed. At the same time, a contact hole, to be formed on the interlayer insulation films 14, 18, is formed via at least two or more steps. Even when the pin hole or the failure is produced on the interlayer insulation films 14, 18, the short-circuit defect between the electrodes except for that in the contact hole is prevented, and the yield is improved. COPYRIGHT: (C)2006,JPO&NCIPI

Electrooptical device, liquid crystal display device, and method for manufacturing them

PROBLEM TO BE SOLVED: To provide a method for manufacturing a TFT array substrate for a liquid crystal display by which a high-quality TFT array substrate where display defects such as a point defect and display irregularity are not caused can be manufactured with high production efficiency. SOLUTION: The method includes: a step A of forming gate wiring and a gate electrode from a first metal thin film by photoengraving and etching; a step B of forming a gate insulating film and forming a semiconductor active film and an ohmic contact film by photoengraving and etching; a step C of forming source wiring, a source electrode, and a drain electrode from a second metal thin film by photoengraving and etching; a step D of forming an interlayer insulating film and thereafter forming a contact hole by photoengraving and etching; and a step E of forming a pixel electrode from a transparent conductive film by photoengraving and etching. The second metal thin film is composed of an alloy essentially comprising Mo. The steps B and C are replaced by a step of forming a gate insulating film and a second metal thin film, and thereafter forming a TFT in one photoengraving and etching step. COPYRIGHT: (C)2005,JPO&NCIPI

利夫荒木

Papers

Liquid crystal display device and method of manufacturing the same

Sputtering apparatus for large-sized substrate

Active matrix substrate

Electrooptical device, liquid crystal display device, and method for manufacturing them

Method for manufacturing thin film transistor array substrate

利夫 荒木

Papers

Liquid crystal display device and method of manufacturing the same

Sputtering apparatus for large-sized substrate

Active matrix substrate

Electrooptical device, liquid crystal display device, and method for manufacturing them

Method for manufacturing thin film transistor array substrate

利夫荒木