An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Aspects of the invention provide a transflective liquid crystal display device that prevents display failure, such as an afterimage and unevenness like stains, and achieves a bright display with a wide viewing angle in both transmissive display and reflective display. The liquid crystal display device of the invention is a vertically-aligned transflective liquid crystal display device having a multigap structure. Each pixel can include, in a dot region, a plurality of islands, and connecting portions for electrically connecting the adjoining islands. Two islands, of the islands, can be disposed in a transmissive display region, and the remaining island is disposed in a reflective display region. A boundary sloping area in which the thickness of a liquid crystal layer continuously changes is disposed right below the connecting portion in the pixel electrode.

Liquid crystal device and electronic apparatus

An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode.

Semiconductor device and manufacturing method therefor

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Disclosed are an LCD device and a method of manufacturing the same, in which a passivation layer and a pixel electrode are simultaneously formed by a single mask process using a half tone mask, and thus, manufacturing efficiency increases, and a defective contact due to loss of the pixel electrode can be prevented in a pad area. The LCD device includes a pad part including a pad area and a contact area. The LCD device includes a pixel pad formed in the pad area, a pixel bar formed in the contact area, and a bridge layer contacting the pixel pad with the pixel bar. The bridge layer is formed as a single layer or multi layers, and formed of one or more of a transparent conductive material and an opaque conductive material.

Liquid crystal display device and method for manufacturing the same

PROBLEM TO BE SOLVED: To provide a liquid crystal display device of FFS mode, which can improve a numerical aperture, and to provide a method of manufacturing the same. SOLUTION: The liquid crystal display device has liquid crystal sandwiched between a TFT array substrate having a TFT 50 and a counter substrate disposed opposite the TFT array substrate. The liquid crystal display device has, on the TFT array substrate, a pixel electrode 6 formed directly above or below a drain electrode 5 of a TFT 50 to directly overlap at least partially with the drain electrode 5, an interlayer dielectric 12 covering the pixel electrode 6, and a counter electrode 8 formed on the interlayer dielectric 12 and having a slit for generating a fringe electric field between the pixel electrode 6 and the counter electrode 8. COPYRIGHT: (C)2009,JPO&INPIT

Liquid crystal display device and method of manufacturing the same

PROBLEM TO BE SOLVED: To provide a liquid crystal display apparatus with which short circuits occurring between source wiring and common electrodes can be reduced and a manufacturing method therefor. SOLUTION: The liquid crystal display apparatus according to this invention relates to what is called an in-plane switching system by which a voltage is applied between a pixel electrode 6 and the common electrode 5 to apply an electric field almost parallel to a substrate surface to a liquid crystal layer. In this liquid crystal display apparatus, a source electrode 3 is made to overlap a part of the common electrode 5 across an insulating film 4. This insulating film 4 is comprised of a plurality of insulating films 4a, 4b. COPYRIGHT: (C)2004,JPO

Liquid crystal display apparatus and manufacturing method therefor

PROBLEM TO BE SOLVED: To provide a liquid crystal display with wide angle of field and high contrast by creating areas where field intensity to be impressed on a liquid crystal is different in individual pixels as pixel structure without creating steps by an insulation film in the liquid crystal display. SOLUTION: This liquid crystal display is provided with a TFT provided at a crossed part between gate wiring and source wiring and applied to the liquid crystal display at least having pixel electrodes 14, 16, an opposite electrodes 24 and a liquid crystal 26, etc. And the pixel electrodes are divided into two as the pixel electrode 16 and the pixel electrode 14 provided in layer higher than an insulation layer provided in a layer higher than the pixel electrode 16. And the pixel electrodes 16 and 14 have areas not to be mutually overlapped. Furthermore, the pixel electrodes 16 and 14 are electrically connected with each other by a contact hole, etc.

Liquid crystal display and its manufacturing method

PROBLEM TO BE SOLVED: To reduce manufacturing costs of a semi-transparent liquid crystal display by simplifying its structure and its manufacturing processes. SOLUTION: The semitransparent liquid crystal display has a layer structure wherein a reflection pixel electrode 65 is formed, by using a second metal film 6 which constitutes a source electrode 61, a drain electrode 62, a source wiring 63 and the like, and a transparent pixel electrode 91 using a transparent conductive film is formed as an upper layer of the second metal film 6 via a second insulating film 7, and a TFT array substrate can be formed in five photoengraving processes. The structure and the manufacturing processes of the semitransparent liquid crystal display can be simplified since an interlayer insulating film consisting of an organic resin film having high material costs is not needed. COPYRIGHT: (C)2006,JPO&NCIPI

Semitransparent liquid crystal display and its manufacturing method

PROBLEM TO BE SOLVED: To improve manufacturing yield of a TFT array substrate by improving anti-static electricity characteristic of semiconductor wires in the TFT array substrate. SOLUTION: The TFT array substrate is provided with: many gate wires 11L formed of a first metal layer; many source wires 15L which is formed of a second metal layer to be allocated crossing the gate wires 11L; a TFT 6 formed of a gate electrode, a source electrode 15S, a drain electrode 15D, and a semiconductor layer 14T; semiconductor wire 14L formed of semiconductor layer, allocated under the source wire 15L and extended along the source wire 15L; and a pattern 11E of the terminated part formed of the first metal layer to include the terminated part of the semiconductor wire 14L. COPYRIGHT: (C)2006,JPO&NCIPI

慎吾永野

Papers

Liquid crystal display device and method of manufacturing the same

Liquid crystal display apparatus and manufacturing method therefor

Liquid crystal display and its manufacturing method

Semitransparent liquid crystal display and its manufacturing method

Tft array substrate

慎吾 永野

Papers

Liquid crystal display device and method of manufacturing the same

Liquid crystal display apparatus and manufacturing method therefor

Liquid crystal display and its manufacturing method

Semitransparent liquid crystal display and its manufacturing method

Tft array substrate

慎吾永野