The invention relates to a method for preparing a high-conductivity stretchable sponge graphene-based electrode material. A chemical vapor deposition method is adopted to grow sponge graphene on a foam metal substrate; then, the prepared graphene/foam metal is soaked into an etching solution, and the concentration and the temperature of the etching solution are controlled so as to obtain a graphene/metal particle mixing structure; then, the prepared graphene/foam metal is fished out of the etching solution to be cleaned; pre-stretching 3M stretchable rubber tape is used for covering the surface of graphene, and the graphene is fished out and naturally dried; a pre-stretching elastic substrate covering a flexible graphene/metal particle mixing structure slowly recovers to the original length or area, so that the self-assembling crumpled stretchable graphene/metal particle mixing structure electrode material is prepared. The electrode material is excellent in stretching performance, good in stability, high in conductivity, low and controllable in cost, and capable of being produced in a large-scale manner, and has the great application value.

Method for preparing high-conductivity stretchable sponge graphene-based electrode material

The present invention provides a method for preparing wrinkle-free graphene. The method comprises the following steps of: S1: providing a catalyzation substrate; performing ion implantation in a preset region of a surface of the catalyzation substrate to damage catalytic performance of the implantation region and to form a plurality of separate non-implantation units on the surface of the catalyzation substrate; and S2: putting the catalyzation substrate in a growth chamber; heating the catalyzation substrate to a preset temperature; introducing a carbon source to the growth chamber; and growing a plurality of separate wrinkle-free graphene units on the surface of the catalyzation substrate. According to the method provided by the present invention, not only high-quality graphene units with no wrinkle or low wrinkle density can be obtained, but also graphene units in a particular shape can be obtained by controlling the region in which ions are implanted, thereby meeting various device application demands.

Method for preparing wrinkle-free graphene

The invention relates to a device and a method for transferring CVD grown graphene. The method comprises the specific steps: 1) removing the graphene grown on the back of a corresponding substrate by use of a chemical vapor deposition method; 2) fixing the same ends of a target substrate and a growth substrate/single-sided graphene sample obtained in the step 1) on the wall of a bottom hollowed-out container, wherein the target substrate is parallel to the liquid level of an etchant, while the growth substrate/single-sided graphene sample is inserted under the liquid level; 3) firstly etching the part, immersed under the liquid level, of the growth substrate, and adjusting the position of the liquid level in the hollowed-out container so that the graphene is in contact and fitted with the target substrate, thereby finishing transfer; 4) continuing to adjust the position of the liquid level of the etchant, repeating the etching and transfer operations in the step 3) and gradually etching the single-sided graphene sample from a free end to a fixed end until all the etching is completed. According to the method for transferring the CVD grown graphene, the pollution problem of organic component residual due to organic matters such as PMMA used in the existing graphene transfer technology is avoided, the transfer process is simplified, and a novel process of transferring a continuous large-area and high-quality graphene sample while etching is realized.

Device and method for transferring CVD grown graphene

The invention relates to a method for coating an atomic force microscope (AFM) probe tip with grapheme. The method comprises: 1) placing an AFM probe to be coated on the bottom of a container and injecting deionized water into the container; 2) floating a film with graphene on the surface of the deionized water so that a side with the graphene faces the bottom of the container; 3) draining the deionized water out of the container so that the film with graphene covers the tip of the AFM probe; and 4) dissolving the film with a solvent, cleaning the probe with the deionized water, and drying theprobe. The probe tip prepared by the method is tightly and uniformly coated with the graphene, the graphene thickness is adjustable, and the probe tip has a long service life. The method can realizelarge-scale production and is favorable for reducing errors.

Method for coating an atomic force microscope probe tip with grapheme

The present invention relates to a method for preparing a silicon nanowire array based on a metal-assisted chemical etching technique and belongs to the semiconductor nanomaterial preparation technical field According to the method of the invention, a mixed solution of hydrofluoric acid (HF) and silver nitrate (AgNO3) with a certain parameter, is prepared, and the solution is subjected to ultrasonic mixing for 3 to 5 minutes; a cleaned silicon wafer is arranged in the mixed solution, so that Ag particles can be deposited; and the silicon wafer is arranged in a mixed solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with a certain parameter, and therefore, a length-controllable silicon nanowire array is prepared through using the principle that the mixed solution, the Ag particles and the silicon wafer can form a primary battery The method has the advantages of low cost, simple process and high production efficiency and the like With the method adopted, a simple and convenient approach is provided for the preparation of silicon nanowire solar batteries

Method for preparing silicon nanowire array based on metal assisted chemical etching technique

The invention belongs to the technical field of processes of novel materials and semiconductors, and in particular relates to a pollution and drape-free transfer method suitable for large-area graphene. According to the transfer method provided by the invention, a metal substrate is directly removed by a corrosive liquid without using organic matter such as PMMA (Polymethyl Methacrylate) as a protective layer of graphene so as to obtain a graphene film floating on the liquid level. Then, the corrosive liquid is diluted to near pure water, and the water level is descended at an appropriate speed. Graphene is contacted with an inclined target substrate below graphene in the process of descending along with the water level, and is flatly paved on the target substrate under the stretching effect of tension of the water level, so that graphene is transferred in the pollution and drape-free manner. The method is suitable for transferring large-area graphene. The method provided by the invention is simple and optimal in process and low in cost, pollution of organic matters to graphene is fundamentally inhibited, damage to graphene in the transferring process is reduced, and meanwhile, formation of micro 'drapes' is avoided.

Pollution and drape-free transfer method suitable for large-area graphene

The invention discloses a preparation method of silicon nanowire arrays easy in realizing the large-area separation and belongs to the technical field of the nanometer material technology and application. According to the preparation method, silicon wafers are processed, and the silicon wafers with the clean and smooth surface are obtained; then, the silicon wafers are placed between two electrodes and are put into etching liquid together with the electrodes for etching reaction, and silicon nanowire arrays with different lengths are obtained; a transverse electric field which has the electric field intensity being 150 to 220V/cm and is vertical to the etching direction is added before 10 to 15 minutes of the etching completion until the reaction finishes; and finally, nitric acid is used for removing sliver remained in the silicon nanowire arrays, hydrofluoric acid is used for removing oxidation layers at the surface of the silicon wafers, and the silicon nanowire arrays easy in realizing the large-area separation are obtained. The preparation method has the advantages that the process is simple, the repeatability is good, the flexible and controlled effects are realized, and the cost is low; and the additional transverse electric field is introduced for the first time for preparing the silicon nanowire arrays easy in realizing the large-area separation, and the problems that the separation is difficult in the traditional silicon nanowire array transfer, and the length is not uniform after the transfer are solved.

Li Meicheng

Papers

Pollution and drape-free transfer method suitable for large-area graphene

Preparation method of silicon nanowire arrays easy in realizing large-area separation