L
Li Xueming
Researcher at Yunnan Normal University
Publications - 23
Citations - 3049
Li Xueming is an academic researcher from Yunnan Normal University. The author has contributed to research in topics: Quantum dot & Graphene. The author has an hindex of 8, co-authored 23 publications receiving 2521 citations.
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Journal ArticleDOI
Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots
Libin Tang,Rongbin Ji,Xiangke Cao,Jingyu Lin,Hongxing Jiang,Li Xueming,Kar Seng Teng,Chi Man Luk,Songjun Zeng,Jianhua Hao,Shu Ping Lau +10 more
TL;DR: The G QDs are capable of converting blue light into white light when the GQDs are coated onto a blue light emitting diode and the photoluminescence quantum yields were determined to be 7-11%.
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Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots.
Libin Tang,Rongbin Ji,Li Xueming,Gongxun Bai,Chao Ping Liu,Jianhua Hao,Jingyu Lin,Hongxing Jiang,Kar Seng Teng,Zhibin Yang,Shu Ping Lau +10 more
TL;DR: The layered structure of nitrogen-doped graphene quantum dots (N-GQDs) is reported which possess broadband emission ranging from 300 to >1000 nm and a broadband photodetector with responsivity as high as 325 V/W is demonstrated by coating N-GZDs onto interdigital gold electrodes.
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Energy-level structure of nitrogen-doped graphene quantum dots
TL;DR: In this article, a one-pot synthesis method was proposed to synthesize large-quantity N-GQDs at room temperature and atmospheric pressure under a prolonged reaction time.
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Sulphur doping: a facile approach to tune the electronic structure and optical properties of graphene quantum dots.
TL;DR: Absorption and photoluminescence investigations show that inter-band crossings are responsible for the observed multiple emission peaks and the incorporation of ∼1 at% of S into the quantum dots can effectively modify the electronic structure of the S-GQDs by introducing S-related energy levels between π and ρ of C.
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Bottom-up synthesis of large-scale graphene oxide nanosheets
TL;DR: In this paper, a self-assembly method was proposed to synthesize GONs with tunable thickness ranging from ∼1 nm (monolayer) to ∼1500 nm.