Yik-Khoon Ee, Ronald A. Arif, Nelson Tansu, Pisist Kumnorkaew, and James F. Gilchrist Citation: Applied Physics Letters 91, 221107 (2007); doi: 10.1063/1.2816891 View online: http://dx.doi.org/10.1063/1.2816891 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/91/22?ver=pdfcov Published by the AIP Publishing

Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O 2 /polystyrene microlens arrays

Effects of silver catalyst concentration in metal assisted chemical etching of silicon

Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

Recently, silicon (Si) nanowires have been intensively applied for a wide range of optoelectronic applications. Nevertheless, rare explorations considering the photodegradation of organic pollutants based on Si nanowires were performed, and they still require vast improvement, in particular for their degradation efficiency. In this study, broad-band and high efficiency photocatalytic systems were demonstrated through the good incorporation of Si nanowires with highly fluorescent carbon nanodots. The photodegradation rate of these intriguing heterostructure arrays under a 580 nm light illumination is approximately 6 times higher than that of sole Si nanowires, and more than 3.6 and 4.5 times higher than that of Si nanowire incorporated with silver and gold nanoparticles, respectively. Optimizing the luminescent behaviors of carbon nanodots leads to the involvement of multiple light sources that activate the photoexcitation of carriers within the Si nanowires. This feature was further elucidated by examining the corresponding photocurrents under light illumination, which presents currents 1.9 times higher than those with the sole Si nanowires. In combination with excellent wettability with dye solutions, the present heterostructured nanowire arrays have promised the robust photocatalytic capability with retained efficiency after cycling uses, which may open up unique opportunities for future pollutant detoxification and wastewater treatment.

Well incorporation of carbon nanodots with silicon nanowire arrays featuring excellent photocatalytic performances

Enhanced photocatalytic degradation of methylene blue by metal-modified silicon nanowires

In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical etching method of silicon wafers in an etching solution composed of HF and H2O2. Photoelectric properties of the monocrystalline SiNWs are improved greatly with the formation of the nanostructure on the silicon wafers. By controlling the hydrogen peroxide concentration in the etching solution, SiNWs with different morphologies and surface characteristics are obtained. A reasonable mechanism of the etching process was proposed. Photocatalytic experiment shows that SiNWs prepared by 20% H2O2 etching solution exhibit the best activity in the decomposition of the target organic pollutant, Rhodamine B (RhB), under Xe arc lamp irradiation for its appropriate Si nanowire density with the effect of Si content and contact area of photocatalyst and RhB optimized.

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Fabrication and photocatalytic properties of silicon nanowires by metal-assisted chemical etching: effect of H2O2 concentration

The invention discloses a preparation method of one-dimensional silicon nanowires with different linear densities The method includes following steps of, a, preprocessing a silicon chip; b, preparing a one-dimensional silicon nanowire array by means of a metal catalysis etching method; and c, performing postprocessing, wherein the metal catalysis etching method includes two steps of, step one, depositing silver nanoparticles: impregnating the preprocessed silicon chip in an HF-AgNO3 mixed aqueous solution for 20-40 seconds, the concentration of HF is 01-02 mol/L, and the concentration of AgNO3 is 0008-0012 mol/L; and step two, performing metal assisted etching: immersing the silicon chip obtained from the step one into an HF-H2O2 mixed etching solution, and performing etching for 20-40 minutes under a room temperature According to the preparation method of the one-dimensional silicon nanowires with the different linear densities, the photoelectric properties of the prepared one-dimensional silicon nanowire array are obviously improved in ultraviolet diffuse reflection, photocurrent characteristics and photocatalysis reaction, technological parameters can be adjusted to control shapes and densities of the silicon nanowires, and the preparation method is simple, low in cost and pollution-free

Liang Xuanqi

Papers

Fabrication and photocatalytic properties of silicon nanowires by metal-assisted chemical etching: effect of H2O2 concentration

Preparation method of one-dimensional silicon nanowires with different linear densities