L
Lin Jing
Researcher at South China University of Technology
Publications - 15
Citations - 190
Lin Jing is an academic researcher from South China University of Technology. The author has contributed to research in topics: Nanorod & Layer (electronics). The author has an hindex of 5, co-authored 15 publications receiving 70 citations.
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Journal ArticleDOI
A Novel Approach for Achieving High‐Efficiency Photoelectrochemical Water Oxidation in InGaN Nanorods Grown on Si System: MXene Nanosheets as Multifunctional Interfacial Modifier
Journal ArticleDOI
Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting
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Highly Efficient InGaN Nanorods Photoelectrode by Constructing Z-scheme Charge Transfer System for Unbiased Water Splitting.
TL;DR: In this article, an unbiased Z-scheme InGaN/Cu2O nanoparticles heterostructured system with boosted interfacial charge transfer is constructed for the first time.
Journal ArticleDOI
Electronic engineering of transition metal Zn-doped InGaN nanorods arrays for photoelectrochemical water splitting
Lin Jing,Yu Yuefeng,Xu Zhenzhu,Fangliang Gao,Zhang Zhijie,Fanyi Zeng,Wenliang Wang,Guoqiang Li +7 more
TL;DR: In this article, a transition metal zinc (Zn) doped InGaN nanorods arrays were fabricated by radio-frequency plasma-assisted molecular beam epitaxy, which greatly decreases the defects and improves the valence band potential of InGaNs, which is beneficial for the rapid carrier separation efficiency with decreased photogenerated carrier recombination rate and improved water oxidation kinetics.
Journal ArticleDOI
Surface passivation of InGaN nanorods using H3PO4 treatment for enhanced photoelectrochemical performance
Xu Zhenzhu,Shuguang Zhang,Liang Jinghan,Lin Jing,Yu Yuefeng,Runze Li,Fangliang Gao,Guoqiang Li +7 more
TL;DR: In this paper, a simple and low-cost surface treatment method, which utilizes H3PO4 to passivate surface states in the as-grown InGaN nanorods, is presented.