Linpeng Dong

TL;DR: The structural, electronic, and optical properties of β-Ga2O3 with oxygen vacancies are studied by employing first-principles calculations based on density function theory and it is concluded the oxygen vacancy are most stable in their fully charge states.

TL;DR: In this paper, a self-powered and fast response photodetectors based on β-Ga2O3/4H-SiC pn heterojunction are demonstrated by depositing β-O3 films on p-type 4H−SiC templates using Pulse Laser Deposition method, and the detectors exhibit an ultrahigh current Ion/Ioff ratio more than 103 (∼1655) at the light intensity of 91 μW/cm2 and a fast photo-response speed (a rise time of 11 milliseconds and a decay time of 19 milliseconds

TL;DR: In this article, the authors investigated the compensation mechanism between N acceptors and native defects in β-Ga 2 O 3 by employing the approach of pseudopotential plane-wave under the density functional theory framework.

TL;DR: In this article, an ultralow dark current solar-blind photodetector based on β-Ga2O3/4H-SiC heterojunction is generated by depositing a thin film on n-type 4HSiC substrates using Pulse Laser Deposition method.

TL;DR: In this article, β-Ga2O3 thin films were directly deposited on sapphire substrates by radio-frequency magnetron sputtering, and the effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of the films were investigated in detail.