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Yuming Zhang
Researcher at Xidian University
Publications - 281
Citations - 2205
Yuming Zhang is an academic researcher from Xidian University. The author has contributed to research in topics: Breakdown voltage & Schottky diode. The author has an hindex of 16, co-authored 253 publications receiving 1375 citations.
Papers
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Effects of oxygen vacancies on the structural and optical properties of β-Ga 2 O 3
TL;DR: The structural, electronic, and optical properties of β-Ga2O3 with oxygen vacancies are studied by employing first-principles calculations based on density function theory and it is concluded the oxygen vacancy are most stable in their fully charge states.
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Progress of Ultra-Wide Bandgap Ga 2 O 3 Semiconductor Materials in Power MOSFETs
Zhang Hongpeng,Lei Yuan,Xiaoyan Tang,Hu Jichao,Jianwu Sun,Yimen Zhang,Yuming Zhang,Renxu Jia +7 more
TL;DR: In this article, the authors introduce the basic material properties of the β-phase of Ga and review the recent progress and advances of β-Ga-phase based metal-oxide-semiconductor field effect transistors (MOSFETs).
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Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response
TL;DR: In this paper, a self-powered and fast response photodetectors based on β-Ga2O3/4H-SiC pn heterojunction are demonstrated by depositing β-O3 films on p-type 4H−SiC templates using Pulse Laser Deposition method, and the detectors exhibit an ultrahigh current Ion/Ioff ratio more than 103 (∼1655) at the light intensity of 91 μW/cm2 and a fast photo-response speed (a rise time of 11 milliseconds and a decay time of 19 milliseconds
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Ab initio study of N-doped β-Ga2O3 with intrinsic defects: the structural, electronic and optical properties
TL;DR: In this article, the authors investigated the compensation mechanism between N acceptors and native defects in β-Ga 2 O 3 by employing the approach of pseudopotential plane-wave under the density functional theory framework.
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Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors
Jiangang Yu,Zizhuo Nie,Linpeng Dong,Lei Yuan,Dejun Li,Yu Huang,Lichun Zhang,Yuming Zhang,Renxu Jia +8 more
TL;DR: In this article, an ultralow dark current solar-blind photodetector based on β-Ga2O3/4H-SiC heterojunction is generated by depositing a thin film on n-type 4HSiC substrates using Pulse Laser Deposition method.