Showing papers by "Lynford L. Goddard published in 2003"
TL;DR: In this article, a low-threshold room temperature continuous wave 149'µm GaInNAsSb laser was used with a high external quantum efficiency of 40% and maximum output power of 30'mW from both facets.
Abstract: Low-threshold room temperature continuous wave 149 µm GaInNAsSb lasers are presented Room temperature threshold current density of 11 kA/cm2 was observed with a high external quantum efficiency of 40% and maximum output power of 30 mW from both facets
60 citations
TL;DR: In this paper, the longest wavelength on GaAs to date, 1460µm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), was demonstrated.
Abstract: Lasing at 1460 µm from a monolithic, GaInNAsSb vertical cavity surface emitting laser (VCSEL), the longest wavelength on GaAs to date, is demonstrated Threshold current was 058 A (17 kA/cm2), pulsed with a duty cycle of 01% The VCSEL was cooled to reach threshold, from 700 mA at 0°C to 580 mA at −10°C
36 citations
TL;DR: In this article, the first 1.5μm GaInNAsSb laser was demonstrated, which exhibits a pulsed threshold current density of 930 A/cm2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), and peak power above 70mW.
22 citations
27 Oct 2003
TL;DR: In this article, the first continuous wave (CW) 1.50 µm GaAs-sb laser was presented, which achieved an external quantum efficiency of 31% with a CW slope efficiency of 0.26 W/A. The GaInNAsSb laser operated at room temperature with threshold current densities as low as 1.06 kA/cm/sup 2/ and output powers as high as 140 mW.
Abstract: We present the first continuous wave (CW) 1.50 /spl mu/m lasers grown on GaAs substrates. These GaInNAsSb lasers operated CW at room temperature with threshold current densities as low as 1.06 kA/cm/sup 2/ and output powers as high as 140 mW. Peak output power was limited by thermal dissipation and up to 670 mW was obtained under pulsed conditions. The CW slope efficiency was 0.26 W/A, corresponding to an external quantum efficiency of 31%. The lasers also featured high CW characteristic temperatures of 139 K over the range 10-60 /spl deg/C, making them ideal for use in uncooled optical communication networks.