M
M Arslan Shehzad
Researcher at Sejong University
Publications - 2
Citations - 279
M Arslan Shehzad is an academic researcher from Sejong University. The author has contributed to research in topics: Field-effect transistor & Photocurrent. The author has an hindex of 2, co-authored 2 publications receiving 218 citations.
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High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films.
M. Waqas Iqbal,M. Zahir Iqbal,M. Farooq Khan,M Arslan Shehzad,Yongho Seo,Jong Hyun Park,Chanyong Hwang,Jonghwa Eom +7 more
TL;DR: A remarkable improvement in the electrical characteristics of single-layer WS2 field-effect transistor (SL-WS2 FET) using chemical vapor deposition (CVD)-grown hexagonal BN (h-BN), which shows unprecedented high mobility of 214 cm2/Vs at room temperature.
Journal ArticleDOI
A facile route to a high-quality graphene/MoS2 vertical field-effect transistor with gate-modulated photocurrent response
M. Farooq Khan,M Arslan Shehzad,M. Zahir Iqbal,M. Waqas Iqbal,Ghazanfar Nazir,Yongho Seo,Jonghwa Eom +6 more
TL;DR: In this article, the vertical field effect transistors (FETs) with h-BN/Gr/MoS2/Mo multi-heterostructures were fabricated and a high current ON-OFF ratio of 106 was demonstrated with a highcurrent density of ∼105 A cm−2.