Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a(n) education organization based out in Topi, Pakistan. It is known for research contribution in the topic(s): Quantum efficiency & Diode. The organization has 618 authors who have published 940 publication(s) receiving 10674 citation(s).

Water‐Splitting Catalysis and Solar Fuel Devices: Artificial Leaves on the Move

Abstract: The development of new energy materials that can be utilized to make renewable and clean fuels from abundant and easily accessible resources is among the most challenging and demanding tasks in science today. Solar-powered catalytic water-splitting processes can be exploited as a source of electrons and protons to make clean renewable fuels, such as hydrogen, and in the sequestration of CO2 and its conversion into low-carbon energy carriers. Recently, there have been tremendous efforts to build up a stand-alone solar-to-fuel conversion device, the "artificial leaf", using light and water as raw materials. An overview of the recent progress in electrochemical and photo-electrocatalytic water splitting devices is presented, using both molecular water oxidation complexes (WOCs) and nano-structured assemblies to develop an artificial photosynthetic system.

Instant nano-hydroxyapatite: a continuous and rapid hydrothermal synthesis{

Abstract: Nano-particle hydroxyapatite (HA) rods, were rapidly synthesised using a three pump continuous hydrothermal process (using a water feed at up to 400 °C and at 24 MPa): the product was obtained as a highly crystalline and phase pure material, without the need for an ageing step or subsequent heat treatment.

Weak and strong convergence of a scheme with errors for two nonexpansive mappings

Abstract: In this paper, we are concerned with the study of an iterative scheme with errors involving two nonexpansive mappings. We approximate the common fixed points of these two mappings by weak and strong convergence of the scheme in a uniformly convex Banach space under a condition weaker than compactness.

Deformation and fracture behaviour of high manganese austenitic steel

Abstract: In this work, the deformation behaviour of high manganese austenitic Hadfield steel sheet samples was studied under uniaxial tensile test conditions. The tests were performed at various strain rates and temperatures to examine the effect of strain rate and microhardness on the strain hardening and formability of sheet samples for production of bullet-proof helmets. The effect of temperature on the tensile behaviour and fracture appearance was also studied using the scanning and transmission electron microscopes. It was found that deformation twinning and dynamic strain ageing phenomena are responsible for work hardening of the steel. The results also showed that steel sheet samples exhibited negative strain rate sensitivity and their hardening capacity decreased at 300–400 °C without the formation of strain induced transformation phases.

Interface formation in infiltrated Al(Si)/diamond composites

Abstract: This study pertains to the investigation of interface formation in infiltrated Al-based composites with high-volume fractions of monocrystalline synthetic diamond particles. The interface characteristics are discussed with respect to process conditions and Al matrix chemistry. To this end, two infiltration techniques, i.e., squeeze-casting and gas pressure infiltration are compared and the effect of Si-addition to the Al matrix is addressed. Eventually, thermal properties of the composite materials are presented and are in turn related to the interface characteristics. Electron microscopy investigations reveal a distinct 50–200-nm-thick layer at the interface between the metal matrix and the diamond particle, regardless of process history and matrix chemistry. This layer is amorphous and consists of carbon, aluminium and oxygen. Additionally, nanocrystallites of Al 2 OC and enrichment of Si are observed within this interface layer in the Si-free, squeeze-casted material and in the gas pressure-infiltrated material with 7 wt.% of Si, respectively. Despite the fact that no evidence of SiC is found in the Si-containing composites, the process conditions experienced in gas pressure infiltration are clearly more favourable than those experienced in squeeze casting with respect to interfacial bonding and thermal properties. Actually, between 25 and 50 °C, the gas pressure-infiltrated AlSi/diamond composite yields a thermal conductivity of 375 W/m K along with a coefficient of thermal expansion of 7 × 10 − 6 /K.