The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface

The microstructural, chemical and electrical properties of Mo/ZrO2/n-Si/Al metal/insulator/semiconductor/metal (MISM) heterostructure with zirconium oxide (ZrO2) as an insulating layer are investigated. In comparison to the metal/semiconductor/metal (MSM) structure, the as-deposited and 600 °C annealed MISM heterostructures demonstrate outstanding rectifying performance and extremely low reverse leakage current. The as-deposited (0.98 eV) and 600 °C annealed MISM heterostructures (1.12 eV) have a higher barrier height (ɸb) than the MSM structure (0.70 eV), which indicates that the barrier height is influenced by the ZrO2 insulating layer. The results show that the ɸb values are improved for 600 °C annealed heterostructure. The forward bias C–V and G/w-V graphs exhibit anomalous peak/variations and three distinct regions called accumulation, depletion, and inversions with respect to the frequency that are attributed to the interface states and RS. The results indicate that ZrO2 film is an effective high-k oxide for the preparation of novel electronic device applications. 

Rapid thermal annealing influences on microstructure and electrical properties of Mo/ZrO2/n-Si/Al MISM junction with a high-k ZrO2 insulating layer

On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface

Voltage and frequency dependent of capacitance and conductivity versus voltage (C&G/ω–V) qualifications of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative capacitance (NC) is a phenomenon that occurs at low frequencies and is primarily caused by minority carrier injection, series resistance (Rs), and surface states (Nss). Because of the specific density distribution and relaxation times of Nss, NC acts different behavior at lower and higher frequency levels and loses its effectiveness with increasing frequency. Also, the fluctuations in C and G/ω were ascribed to doping concentration, surface states loss charges, and interlayer thickness. Nss was acquired using the low-high frequency capacitance method (CLF-CHF), and the forward biased C−2 vs V graphs (at 10 kHz to 1 MHz) were used to determine the Fermi level (EF), barrier height (ΦB), and concentration of doped acceptor atoms (NA). Accordingly, it has been detected that C and G/ω are highly dependence on biases and frequencies. Then again, the polarizations and surface states effect are barely perceptible at extremely higher frequency levels. Thus, polarization and Rs stand out as important parameters that should be taken into account when examining the basic parameters of electronic devices.

Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure

Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure

Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.

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M. Balbaşı

Papers

Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure

Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device