Journal ArticleDOI
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure
TLDR
A metal polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method as discussed by the authors .About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 2022-06-01. It has received 11 citations till now. The article focuses on the topics: Capacitance & Conductance.read more
Citations
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Journal ArticleDOI
The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface
TL;DR: In this paper , the electrical properties of Schottky structures with a RuO2 doped-polyvinyl chloride (PVC) interface were analyzed with a wide frequency range (from 1 kHz to 5 MHz) and voltages.
Journal ArticleDOI
Rapid thermal annealing influences on microstructure and electrical properties of Mo/ZrO2/n-Si/Al MISM junction with a high-k ZrO2 insulating layer
V R Manjunath,U. Chalapathi,B. Purusottam Reddy,Boseong Son,Hui Jin Kim,Chang-Hoi Ahn,Si-Hyun Park +6 more
TL;DR: In this article , the microstructural, chemical and electrical properties of Mo/ZrO2/n-Si/Al metal/insulator/semiconductor/metal (MISM) heterostructures with zirconium oxide (ZRO2) as an insulating layer are investigated.
Journal ArticleDOI
On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)
H.G. Çetinkaya,A. Feizollahi Vahid,Necati Başman,S. Demirezen,Yasemin Şafak Asar,Ş. Altındal +5 more
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Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface
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Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure
TL;DR: In this paper , the voltage and capacitance of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively.
References
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Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
Journal ArticleDOI
A single-frequency approximation for interface-state density determination
W.A. Hill,C.C. Coleman +1 more
TL;DR: In this paper, a new single frequency technique was proposed for low surface state density determination in a range from 7 × 10 9 eV −1 cm −2 to 8 × 10 11 eV−1 cm−2.
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A quasi-static technique for MOS C-V and surface state measurements
TL;DR: In this paper, a quasi-static technique is proposed to obtain the thermal equilibrium MOS capacitance-voltage characteristics. The method is based on a measurement of the MOS charging current in response to a linear voltage ramp, so that the charging current is directly proportional to the incremental MOS capacity.
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Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
R. Castagné,A. Vapaille +1 more
TL;DR: In this paper, the authors measured the apparent interface density in the whole band gap of silicon and showed that the apparent inteiface density can contain a contribution of defects unspecific of the interface, for instance, spatial fluctuation of the interfaces or silicon defects introducing a deep level in the band gap.
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Interface states on semiconductor/insulator surfaces
TL;DR: In this paper, it was shown that impurities and defects in semiconductors are associated with energy levels in the forbidden gap, and it is well known that impurity and defect in a semiconductor can be associated with the energy levels of surface states.