Polycrystalline iron disilicide thin films are prepared by furnace annealing of electron‐beam deposited iron layers. As substrates we use single‐crystal silicon wafers, epitaxial silicon thin films on sapphire substrates, and low‐pressure chemical vapor deposited polycrystalline silicon thin films on oxidized silicon wafers. X‐ray diffraction indicates that orthorhombic β‐FeSi2 is obtained for growth temperatures in the range 800–900 °C. Photothermal deflection spectroscopy reveals a direct band‐gap of 0.85 eV. Optical transitions at energies above 1.4 eV are investigated by spectroscopic ellipsometry. Measurements of the subgap defect absorption, photoluminescence, conductivity, and of the Hall mobility suggest that lower growth temperatures yield material of better quality.

Electronic properties of semiconducting FeSi2 films

https://iopscience.iop.org/article/10.7567/JJAP.56.05DA04/pdf

Thermoelectric silicides: A review

Co-evaporated thin films of semiconducting β-FeSi2

OMCVD of transition metals and their silicides using metallocenes and (di) silane or silicon tetra-bromide

The results of the transport and magnetization measurements on β‐FeSi2 single crystals are presented. The magnetic field dependence of the Hall coefficient in n‐type β‐FeSi2 was observed in the temperature range of 30–300 K and explained in the limits of a two‐band model. The magnetization measurements were performed within the range 4.2–300 K. It was shown that the contribution of the anomalous Hall effect to the total Hall voltage is negligible. Parameters of charge carriers, taking part in conductivity were calculated and the separation between the bands was estimated.

M. C. Bost

Papers

Summary Abstract: Semiconducting silicides as potential materials for electro‐optic very large scale integrated circuit interconnects