M
M. Chernykh
Researcher at Technische Universität Darmstadt
Publications - 12
Citations - 477
M. Chernykh is an academic researcher from Technische Universität Darmstadt. The author has contributed to research in topics: Momentum transfer & Excited state. The author has an hindex of 6, co-authored 10 publications receiving 430 citations.
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Journal ArticleDOI
Structure of the Hoyle State in C 12
TL;DR: A closer inspection of the model calculations, which reproduce the experimental findings, reveals that the term Bose-Einstein condensation of three alpha particles must not be taken too literally.
Journal ArticleDOI
Pair decay width of the Hoyle state and its role for stellar carbon production.
TL;DR: In this paper, the pair decay width of the first excited Hoyle state in the 12-mathrm{C} state was derived from a novel analysis of the world data on inelastic electron scattering covering a wide momentum transfer range, thereby resolving previous discrepancies.
Journal ArticleDOI
Fragment characteristics from fission of 238U and 234U induced by 6.5-9.0 MeV bremsstrahlung
Alf Göök,Alf Göök,M. Chernykh,C. Eckardt,Joachim Enders,P. von Neumann-Cosel,Andreas Oberstedt,Andreas Oberstedt,Stephan Oberstedt,Achim Richter +9 more
TL;DR: In this article, the energy and mass distributions of U-238 and U-234 induced by bremsstrahlung of 6.5-9.0 MeV endpoint energy have been investigated at the superconducting Darmstadt electron linear accelerator S-DALINAC.
Journal ArticleDOI
Particle emission angle determination in Frisch grid ionization chambers by electron drift-time measurements
TL;DR: In this paper, the double kinetic energy measurement of fission fragments with a double-sided Frisch grid ionization chamber allows a careful determination of the emission angle, which is essential in order to determine the fission angle.
Journal ArticleDOI
GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices
M. Chernykh,A. A. Andreev,I. S. Ezubchenko,I. A. Chernykh,I. O. Mayboroda,E. M. Kolobkova,Yulia Khrapovitskaya,J. V. Grishchenko,P. A. Perminov,Vadim S. Sedov,A.K. Martyanov,Alexandr Altakhov,Maxim S. Komlenok,V P Pashinin,Andrey G. Sinogeykin,Vitali I. Konov,M. L. Zanaveskin +16 more
TL;DR: In this paper , a new approach to the fabrication of efficient heat sinks for GaN-based transistors is demonstrated, where the growth of polycrystalline diamond coating on the functional silicon layer of SOI wafers followed by etching of a thick silicon substrate and a thin thermal oxide is demonstrated.