scispace - formally typeset
M

M. Chernykh

Researcher at Technische Universität Darmstadt

Publications -  12
Citations -  477

M. Chernykh is an academic researcher from Technische Universität Darmstadt. The author has contributed to research in topics: Momentum transfer & Excited state. The author has an hindex of 6, co-authored 10 publications receiving 430 citations.

Papers
More filters
Journal ArticleDOI

Structure of the Hoyle State in C 12

TL;DR: A closer inspection of the model calculations, which reproduce the experimental findings, reveals that the term Bose-Einstein condensation of three alpha particles must not be taken too literally.
Journal ArticleDOI

Pair decay width of the Hoyle state and its role for stellar carbon production.

TL;DR: In this paper, the pair decay width of the first excited Hoyle state in the 12-mathrm{C} state was derived from a novel analysis of the world data on inelastic electron scattering covering a wide momentum transfer range, thereby resolving previous discrepancies.
Journal ArticleDOI

Fragment characteristics from fission of 238U and 234U induced by 6.5-9.0 MeV bremsstrahlung

TL;DR: In this article, the energy and mass distributions of U-238 and U-234 induced by bremsstrahlung of 6.5-9.0 MeV endpoint energy have been investigated at the superconducting Darmstadt electron linear accelerator S-DALINAC.
Journal ArticleDOI

Particle emission angle determination in Frisch grid ionization chambers by electron drift-time measurements

TL;DR: In this paper, the double kinetic energy measurement of fission fragments with a double-sided Frisch grid ionization chamber allows a careful determination of the emission angle, which is essential in order to determine the fission angle.
Journal ArticleDOI

GaN-based heterostructures with CVD diamond heat sinks: A new fabrication approach towards efficient electronic devices

TL;DR: In this paper , a new approach to the fabrication of efficient heat sinks for GaN-based transistors is demonstrated, where the growth of polycrystalline diamond coating on the functional silicon layer of SOI wafers followed by etching of a thick silicon substrate and a thin thermal oxide is demonstrated.