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M

M. de la L. Olvera

Researcher at CINVESTAV

Publications -  112
Citations -  4946

M. de la L. Olvera is an academic researcher from CINVESTAV. The author has contributed to research in topics: Thin film & Zinc. The author has an hindex of 27, co-authored 112 publications receiving 4803 citations. Previous affiliations of M. de la L. Olvera include Instituto Politécnico Nacional.

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Physical properties of ZnO:F obtained from a fresh and aged solution of zinc acetate and zinc acetylacetonate

TL;DR: In this paper, the effect of the zinc precursor type, the aging of the starting solution, the substrate temperature and a vacuum-annealing treatment on the electrical, morphological, structural and optical properties was studied, in order to obtain conductive and transparent zinc oxide thin films.
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Indium-doped ZnO thin films deposited by the sol–gel technique

TL;DR: In this article, conducting and transparent indium-doped ZnO thin films were deposited on sodocalcic glass substrates by the sol-gel technique and the electrical resistivity, structure, morphology and optical transmittance of the films were analyzed as a function of the film thickness and the post-deposition annealing treatments in vacuum, oxygen or argon.
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Gallium-doped ZnO thin films deposited by chemical spray

TL;DR: In this paper, the effect of the variation of the [Ga]/[Zn] rate in the starting solution, the substrate temperature as well as the post-annealing treatments on the physical properties was examined.
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ZnO:Al thin films obtained by chemical spray: effect of the Al concentration

TL;DR: In this paper, the effect of the Al concentration and the type of solvent (methanol, ethanol and isopropanol) in the starting solution, on the resistivity, structure, surface morphology and optical transmittance of the ZnO:Al thin films was studied.
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Preparation of conducting and transparent indium-doped ZnO thin films by chemical spray

TL;DR: In this paper, the dependence of the electrical, structural, morphological and optical properties on the preparation conditions has been studied, and a minimum resistivity value around 3×10−3 ǫ cm was obtained for films deposited from highly concentrated starting solutions, 0.4 and 0.5 m.