Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding

Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers

Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective

Applications of photo detectors in various areas have greatly motivated its research and development. This paper reports a heterojunction based porous silicon (PS) and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> hetero junction of the type of gold-PS-TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -gold (metal semiconductor metal) structure. The response of the photo detector is tested in presence of room light, flash light and laser (wavelength between 630–670 nm) and sensitivity is found to be 66.66%, 84% and 126% respectively. Other sensor parameters have also been studied; for example, responsivity, response and recovery time. Further, the sensor output is integrated to a cloud-based IoT platform. A demonstration of sensing and control in an IoT network with use of a photodetector has been portrayed. This type of arrangement is found to be beneficial for applications where frequent human intervention is not possible. 

A Photodetector-based Automated Light Intensity Controlling System using IoT

Recent advances in plasmonic absorption devices offer a novel approach for extending the range of silicon light detection. This is achieved by exploiting the Schottky interface energy barrier, which overcomes the limitation of the 1.12 eV photon energy conversion imposed by the silicon intrinsic bandgap. Internal photoemission has been widely accepted as the primary emission mechanism, which is mostly limited by the Schottky barrier height. However, we have discovered that carriers with energy lower than the Schottky barrier can generate electrical responses through the photothermal effect, breaking this restriction. In this study, we closely investigate two forms of photoresponses, namely photoelectric and photothermal, on a NiSi thin film Schottky photodetector, considering various factors such as temperature, applied bias, incident power, and wavelength regime. Without photothermal assistance, the device achieves a responsivity of 0.41 mA/W to a 1550 nm laser. Under bias-driven conditions, highly energized hot carriers generate a 2.18 μA photoelectric response, while a 0.861 μA photothermal response is simultaneously observed under 6 mW 1550 nm laser illumination. Through systematic investigation, we advance the mechanism of both responses by combining the hot carrier model and the Schottky barrier diagram. Finally, we experimentally obtain a 4.85 μA sheer photothermal response to a 0.475 mW 4-μm wavelength signal with 10.21 mA/W responsivity. It is expected that the device will also show responses to longer wavelengths. 

Broad spectral response to photon energy unlimited by Schottky barrier from NiSi/Si junction

Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN

M. Dhanalakshmi

Papers

Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN