An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.

Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes

Silicon Photonic Biosensors Using Label-Free Detection.

An inkjet printing system includes a scalable printhead with an ink manifold. The scalable printhead is formed by mounting an ink manifold and multiple thermal inkjet printhead dies to a carrier substrate. The carrier substrate is machined to include through-slots. There is a through-slot for each refill slot among the multiple printhead dies. A first end of a given through-slot connects to a refill slot of a corresponding printhead die. An opposite, second end of the through-slot connects to the ink manifold. The ink manifold includes an inlet for coupling to an ink supply reservoir. The ink manifold also includes one or more channels and a plurality of feed openings. Each feed opening connects to a printhead die refill slot by way of a substrate through-slot.

Inkjet printing apparatus with ink manifold

Error-free all-optical wavelength conversion at 168 Gb/s, which is the highest repetition rate ever reported, has been achieved by using a symmetric-Mach-Zehnder (SMZ)-type switch. Low-power-penalty 84-Gb/s operation is also demonstrated. The push-pull switching mechanism of the SMZ switch enables such ultrafast operation based on cross-phase modulation associated with the carrier depletion in a semiconductor optical amplifier. The configuration of the delayed-interference signal-wavelength converter, which is a simplified variant of the SMZ switch, is used in this experiment.

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168-Gb/s all-optical wavelength conversion with a symmetric-Mach-Zehnder-type switch

Future bandwidth demand in optical communication and signal processing systems will soon exceed 100?Gb?s?1 as is commonly forecasted from a throughput experience curve for communication systems. However, such systems cannot be realized without introducing ultrafast, all-optical devices, since existing optoelectronic and electronic devices and integrated circuits would not be able to function at a bit rate exceeding 100?Gb?s?1, because of the speed limit intrinsic to conventional semiconductor materials and devices. All-optical devices based on completely new principles, not being restricted by properties of existing materials and device principles, must be developed for the realization of ultrafast communication and signal processing systems. This paper reviews requirements of ultrafast all-optical devices and recent progress in ultrafast light sources and all-optical switches based on either novel device principles or ultrafast phenomena in novel materials such as quantum-confined nanostructures. Recent developments described here include mode-locked lasers and a variety of all-optical switches based on different phenomena including Mach?Zehnder interferometer structures, spin relaxation, intersubband transition, and ultrafast absorption recovery in organic thin films and semiconductor quantum dots. Some of the recent developments have already shown capability of basic functions such as ultrafast pulse generation and signal processing at the bit rate of 500?Gb?s?1 to 1?Tb?s?1. Technical challenges expected for the future are discussed in view of their applications in real systems.

https://iopscience.iop.org/article/10.1088/1367-2630/6/1/183/pdf

Femtosecond all-optical devices for ultrafast communication and signal processing

We have developed a hybrid-integrated symmetric Mach-Zehnder all-optical switch and evaluated the demultiplexing of 168-Gb/s data pulses at a repetition rate of 10 GHz with this switch. A compact, stable device was realized by assembling semiconductor optical amplifiers as nonlinear waveguides on a planar lightwave circuit in a self-aligned manner. A 6.0-ps switching window needed for 168-Gb/s demultiplexing was provided by the push-pull operation of the symmetric Mach-Zehnder all-optical switch. Demultiplexed signal light showed a high extinction ratio of better than 18 dB. Error-free demultiplexing with a bit error rate of 10/sup -11/ was achieved.

Demultiplexing of 168-Gb/s data pulses with a hybrid-integrated symmetric Mach-Zehnder all-optical switch

We have developed a novel three-dimensional high precision self-aligned assembly using stripe-type Au-Sn solder bumps and a micro-press solder bump formation method. This produces a high bonding precision of 1 /spl mu/m for optical device assembly in both lateral and vertical directions without the need for time-consuming optical axes alignment. Furthermore, we tested a hybrid integrated 4/spl times/4 optical matrix switch, in which multiple SSC-SOAG arrays were simultaneously positioned and optical fibers were passively positioned on a silica based PLC platform using this technology. Four optical chips and seven wiring chips are assembled on a planar lightwave circuit (PLC) platform. The insertion loss for each of these paths at an injection current of 40 mA was within a range of 9/spl plusmn/4 dB. The average extinction ratio was 40 dB. This self-aligned assembly technology was shown to be useful for building hybrid-integrated multichannel optical network components.

Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps

A 4/spl times/4 gate matrix switch has been developed by employing a newly developed self-aligned multiple chip assembly technique in the hybrid integration of spot-size converter integrated semiconductor optical-amplifier gate arrays and optical fibres on a silica based planar lightwave circuit platform.

Hybrid integrated 4×4 optical matrix switch using self-aligned semiconductor optical amplifier gate arrays and silica planar lightwave circuit

A hybrid integrated symmetric Mach-Zehnder (HI-SMZ) all-optical switch is reported. It has a very high dynamic extinction ratio of >20 dB at a switching speed of <4 ps. No delay was found in its rise and fall times with 1 ps control pulses. Thus, the HI-SMZ all-optical switch is capable of high extinction, quasi-square-like modulation up to a speed of /spl sim/4 ps, corresponding to a bit rate exceeding 200 Gbit/s.

Hybrid integrated symmetric Mach-Zehnder all-optical switch with ultrafast, high extinction switching

Precise three-dimensional passive alignment of LD/PD arrays on Si optical benches has been achieved by means of AuSn solder bumps. A punch-and-die technique is used to fabricate the AuSn solder bumps to an extremely high accuracy (/spl plusmn/2 /spl mu/m) in bump height. A stripe-type bump bonding technique is employed to attain precise vertical alignment (/spl plusmn/1 /spl mu/m) of an LD array chip. Average LD-single-mode fiber array coupling loss was as low as -9.5/spl plusmn/0.5 dB, and while that of a PD-multimode fiber array was -0.4/spl plusmn/0.3 dB, almost as good as that with active alignment.

M. Itoh

Papers

Demultiplexing of 168-Gb/s data pulses with a hybrid-integrated symmetric Mach-Zehnder all-optical switch

Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps

Hybrid integrated 4×4 optical matrix switch using self-aligned semiconductor optical amplifier gate arrays and silica planar lightwave circuit

Hybrid integrated symmetric Mach-Zehnder all-optical switch with ultrafast, high extinction switching

Use of AuSn solder bumps in three-dimensional passive aligned packaging of LD/PD arrays on Si optical benches