We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.

Metalorganic chemical vapor deposition of III‐V semiconductors

Electron diffraction measurements on (100) GaAs1−xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu‐I type phase consists of alternating {100} oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E11 structure with alternating {210} oriented GaAs and GaSb layers.

Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

A critical appraisal of growth mechanisms in MOVPE

This article comprehensively reviews the growth of III–V antimony-based semiconductor materials using metal-organic chemical vapor deposition (MOCVD). It does this by first discussing the general trends found for the growth of these materials. Next the specific growth techniques are discussed for each of the antimony-based systems including the binaries InSb, GaSb, and AlSb. The growth techniques used for many of the ternaries and quaternaries of these materials are also discussed. Following this a brief description of the use of dopants, novel organometallic sources and superlattices is presented. Next, the use of common characterization techniques is presented for different types of materials. A variety of the types of devices is then presented followed by a short summary and forecast of future directions that are currently being pursued in these materials.

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

MOVPE growth of GaInAsSb

OMVPE growth of GaAs1-xSbx: solid composition☆

Ga1−xInxAs1−ySby alloys have been grown by organometallic vapor phase epitaxy using trimethyl compounds of Ga, In, As, and Sb(TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor. For the first time, alloys near the center of the region of solid immiscibility have been grown. Alloys with room‐temperature band gaps of 0.45 eV (Ga0.68In0.32As0.28Sb0.72) and 0.37 eV (Ga0.26In0.74As0.76Sb0.24) have been grown on GaSb substrates and alloys with larger band gaps (0.74 eV for Ga0.71In0.29As0.76Sb0.24) have been grown on InP substrates. The smaller band‐gap alloys are grown at temperatures as low as 486 °C. The alloys on InP substrates are grown at higher temperatures of 600 °C, more typical of the GaAsSb and GaInAs alloys reported earlier. Solid composition was determined using energy dispersive x‐ray analysis and combined x‐ray diffraction and photoluminescence measurements. The low‐temperature photoluminescence of these metastable alloys consists of a single, pr...

M.J. Cherng

Papers

MOVPE growth of GaInAsSb

OMVPE growth of GaAs1-xSbx: solid composition☆

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy