M
M.M.B. van den Boom
Researcher at Philips
Publications - 3
Citations - 291
M.M.B. van den Boom is an academic researcher from Philips. The author has contributed to research in topics: Dislocation & Crystal. The author has an hindex of 3, co-authored 3 publications receiving 289 citations.
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Dislocation-free GaAs and InP crystals by isoelectronic doping
TL;DR: In this paper, the influence of isoelectronic doping on the properties of LEC GaAs and InP crystals has been studied and a decrease of the dislocation density was obtained using In and Sb as dopants in GaAs crystals, and In, Sb, As and Ga as a dopant in InP.
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Microdefects in a non-striated distribution in floating-zone silicon crystals
TL;DR: In this article, a new type of microdefect was found in fast-grown dislocation-free floating-zone silicon crystals, formed by condensation of vacancies which only become supersaturated when the cooling rate of the crystal is high.
Journal ArticleDOI
The single crystal growth and characterization of indium phosphide
TL;DR: In this article, the authors have grown dislocation-free and defect-free InP single crystals, doped with sulphur or zinc, by means of the liquid encapsulation Czochralski technique.