Handbook of thin film technology

Etude des composes de terres rares et plus particulierement des variants types d'oxyde interessants comme les materiaux refractaires. On aborde egalement les composes a base de sulfures, oxysulfures, antimoine, bismuthe, silice et bore, en insistant sur le role important joue par les impuretes dans ces materiaux. On propose enfin quelques applications futures en industrie

Rare Earth Compounds (Oxides, Sulfides, Silicides, Boron, …︁) as Thin Films and Thin Crystals Physico‐Chemical Properties and Applications

Optical properties of pyrene doped polymer thin films

Gadolinium fluoride is an attractive optical material with applications in, e.g., deep-UV lithography, solar cells, and medical imaging. Despite the interest toward this material, no atomic layer deposition (ALD) process has been published. In this article, an ALD process for GdF3 using Gd(thd)3 and NH4F as precursors is presented. The deposition was studied at temperatures 275–375 °C, but 285–375 °C produce the purest films. The saturation of the growth per cycle (GPC) with respect to precursor pulses and purges was proved at 300 °C. The GPC value at this temperature is ∼0.26 Å, and the deposition temperature has very little effect on the GPC. According to x-ray diffraction, all the films consist of orthorhombic GdF3. The impurity contents, evaluated by time-of-flight elastic recoil detection analysis, is low, and the films are close to stoichiometric. The nitrogen content is less than <0.04 at. %. The antireflection properties were qualitatively evaluated by UV-vis spectrometry in a transmission mode at a 190–1100 nm range: on sapphire substrates, GdF3 serves as an antireflective coating. Dielectric properties of the films were studied, and for example, a permittivity value of 9.3 was measured for a ∼64 nm film deposited at 300 °C. 

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Atomic layer deposition of GdF<sub>3</sub> thin films

D.C. electrical conductivity of NaYF4 thin films

Electrical conduction in amorphous La2O3 thin films

Caracterisation des couches par diffraction RX, mesure de l'indice de refraction, du facteur de transmission

Structural and optical studies on ion-plated pyrene thin films

Dielectric relaxation in gadolinium fluoride thin films

Electrical conduction in ion plated stearic acid thin films

Charge transport measurements in disordered semiconductors and insulators have been of considerable interest because they can provide information regarding the electronic structure of these materials [1-3]. The study of direct current conduction in thin dielectric films is of importance in thin film applications. Exhaustive work has been done on electrical conduction phenomena in a variety of amorphous and crystalline dielectrics [4-6]. Titanium oxide and titanium nitride are also potential dielectrics with a high permittivity. Though there are more studies on the conduction mechanism of titanium oxide films [7-9] the number of studies on titanium nitride films is relatively less. Osadnik and Das [10] have studied the resistivity of chemically deposited titanium nitride films. In the present investigation, we report our observations on the conduction mechanisms in the case of ion plated titanium nitride films. Aluminium has been evaporated from a tungsten filament onto well cleaned glass substrates to form the base electrode for the capacitor. The titanium nitride layer was deposited by the ion plating method [11] by evaporating titanium powder (99.9%) from a conical basket type tungsten filament, in an atmosphere of nitrogen. The substrates were maintained at a temperature of 150 ° C. Aluminium was again evaporated to complete the MIM sandwich structure. The thickness of the dielectric layer has been measured using a multiple beam interferometer. The samples were well annealed before conducting the studies. The structure of the deposited films was found to be amorphous. The current due to d.c. fields under the condition of constant rate of rising applied voltage was measured with a field-effect transistor nanoammeter. The variation of the current with voltage at different temperatures is shown in Fig. 1. At very low applied voltages, the conduction process due to thermally excited carriers is ohmic. As the voltage is increased, the current rises nonlinearly. Fig. 2 shows the dependence of log/ on the

M. Radhakrishnan

Papers

Electrical conduction in amorphous La2O3 thin films

Structural and optical studies on ion-plated pyrene thin films

Dielectric relaxation in gadolinium fluoride thin films

Electrical conduction in ion plated stearic acid thin films

Electrical conduction in amorphous titanium nitride films