M
M.S. Kuznetsov
Researcher at Saint Petersburg State Polytechnic University
Publications - 56
Citations - 1029
M.S. Kuznetsov is an academic researcher from Saint Petersburg State Polytechnic University. The author has contributed to research in topics: Diamond & Synthetic diamond. The author has an hindex of 18, co-authored 48 publications receiving 822 citations.
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Laser welding and weld hardness analysis of thick section S355 structural steel
TL;DR: In this paper, the performance and potential of deep penetration laser welding of S355 EN 10025 structural steel of 20 and 25mm thickness with a high power fiber laser at power levels of 12-30kW were investigated.
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The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond
TL;DR: In this article, the influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors has been investigated using optical techniques using type IIb diamond single crystals of size up to 8mm.
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High power density nuclear battery prototype based on diamond Schottky diodes
V. S. Bormashov,S. Yu. Troschiev,S. A. Tarelkin,A. P. Volkov,D. V. Teteruk,Anton V. Golovanov,M.S. Kuznetsov,N. V. Kornilov,S.A. Terentiev,Vladimir Blank,Vladimir Blank +10 more
TL;DR: In this paper, the authors used the ion-beam assisted lift-off technique to obtain conversion cells of minimal thickness comparable with the characteristic penetration length of beta-particles emitted by 63Ni isotope.
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Electrical properties of the high quality boron-doped synthetic single-crystal diamonds grown by the temperature gradient method
V. S. Bormashov,S. A. Tarelkin,Sergei G. Buga,M.S. Kuznetsov,S.A. Terentiev,A.N. Semenov,V.D. Blank +6 more
TL;DR: In this article, temperature dependencies of resistivity and the Hall coefficient in high-quality boron-doped synthetic single crystal diamonds grown by the high pressure-high-temperature (HPHT) method have been investigated.
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Power high-voltage and fast response Schottky barrier diamond diodes
Vladimir Blank,V. S. Bormashov,S. A. Tarelkin,Sergei G. Buga,M.S. Kuznetsov,D. V. Teteruk,N. V. Kornilov,S.A. Terentiev,A. P. Volkov +8 more
TL;DR: In this article, a set of packaged vertical diamond Schottky barrier diodes (SBDs) with a large crystal area of up to 25mm2 were developed and investigated, and they showed forward current above 5 A and the blocking voltage over 1000 V in the temperature range from 20°C to 250°C.