M
M. Sahnoun
Researcher at University of Fribourg
Publications - 42
Citations - 1641
M. Sahnoun is an academic researcher from University of Fribourg. The author has contributed to research in topics: Electronic band structure & Electronic structure. The author has an hindex of 21, co-authored 37 publications receiving 1330 citations. Previous affiliations of M. Sahnoun include Applied Materials.
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Elastic, electronic and optical properties of ZnS, ZnSe and ZnTe under pressure
TL;DR: In this paper, the results of first-principles theoretical study of the structural, electronic and optical properties of zinc monochacogenides ZnS, ZnSe and ZnTe, have been performed using the full-potential linear augmented plane-wave method plus local orbitals (FP-APW + lo) as implemented in the WIEN2k code.
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Full potential calculation of structural, electronic and elastic properties of alkaline earth oxides MgO, CaO and SrO
TL;DR: A theoretical study of structural and electronic properties of MgO, CaO and SrO using the full-potential linearized augmented plane wave method was presented in this paper, where the local density approximation was used for exchange-correlation potentials.
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Ab initio study of structural, electronic, elastic and high pressure properties of barium chalcogenides
TL;DR: In this paper, a theoretical study of structural, electronic, elastic and high pressure properties in barium chalcogenides BaX (X = S, Se, Te, Po) is performed, using the full-potential augmented plane wave plus local orbitals method.
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First-principle calculations of structural, electronic and optical properties of BaTiO3 and BaZrO3 under hydrostatic pressure
TL;DR: A theoretical study of cubic BaTiO3 and BaZrO3 perovskites is presented, using the full-potential linear augmented plane wave (FP-LAPW) method as implemented in the WIEN2K code.
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First-principle study of structural, electronic and elastic properties of SrS, SrSe and SrTe under pressure
TL;DR: In this article, the fullpotential linearized augmented plane wave method (FP-LAPW) within the generalized gradient approximation (GGA) was used to calculate the electronic band structures and the total energies of SrS, SrSe and SrTe in NaCl- and CsCl-type structures.