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A. Bouhemadou

Researcher at King Saud University

Publications -  258
Citations -  6537

A. Bouhemadou is an academic researcher from King Saud University. The author has contributed to research in topics: Debye model & Bulk modulus. The author has an hindex of 35, co-authored 230 publications receiving 4671 citations. Previous affiliations of A. Bouhemadou include Université de Sétif.

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Elastic, electronic and optical properties of ZnS, ZnSe and ZnTe under pressure

TL;DR: In this paper, the results of first-principles theoretical study of the structural, electronic and optical properties of zinc monochacogenides ZnS, ZnSe and ZnTe, have been performed using the full-potential linear augmented plane-wave method plus local orbitals (FP-APW + lo) as implemented in the WIEN2k code.
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Solar cells parameters evaluation considering the series and shunt resistance

TL;DR: In this paper, the authors presented a new technique for the evaluation of the parameters of illuminated solar cell with a single diode lumped circuit model and considering the series and shunt resistances.
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FP-APW + lo calculations of the elastic properties in zinc-blende III-P compounds under pressure effects

TL;DR: In this paper, the effect of high-pressures on the structural and elastic properties of XP zinc-blende compounds, with X = B, Al, Ga and In, has been investigated using the full-potential augmented plane wave plus local orbitals method within density functional theory.
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Electronic and thermoelectric properties of the layered BaFAg Ch ( Ch = S, Se and Te): First-principles study

TL;DR: In this article, the full potential linearized augmented plane wave (FP-LAPW) method was used to investigate the electronic properties of the layered BaAgChF (Ch, S, Se, Te) and the standard GGA and TB-mBJ potential were used to model the exchange correlation potential.
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Ab initio study of structural, electronic, elastic and high pressure properties of barium chalcogenides

TL;DR: In this paper, a theoretical study of structural, electronic, elastic and high pressure properties in barium chalcogenides BaX (X = S, Se, Te, Po) is performed, using the full-potential augmented plane wave plus local orbitals method.