Hybrid silicon lasers based on bonded III–V layers on silicon are currently the best contenders for on-chip lasers for silicon photonics. On-chip silicon light sources are highly desired for use as electrical-to-optical converters in silicon-based photonics. Zhiping Zhou and Bing Yin of Peking University in China and Jurgen Michel of Massachusetts Institute of Technology assess the three main contenders for such light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers. They consider operating wavelength, pumping conditions, power consumption, thermal stability and fabrication process. The scientists regard the power efficiencies of electrically pumped erbium-based lasers as being too low and the threshold currents of germanium lasers as being too high. They conclude that III–V quantum dot lasers monolithically grown on silicon show the most promise for realizing on-chip lasers.

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On-chip light sources for silicon photonics

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials.

Si–Ge–Sn alloys: From growth to applications

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sn contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N2 at 500 °C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 × 1019 cm−3. GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations.

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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Material and optical characterizations have been conducted for epitaxially grown Ge1−xSnx thin films on Si with Sn composition up to 10%. A direct bandgap Ge0.9Sn0.1 alloy has been identified by temperature-dependent photoluminescence (PL) study based on the single peak spectrum and the narrow line-width. Room temperature PL emission as long as 2230 nm has also been observed from the same sample.

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Modelling and simulation of fluidized bed steam-oxygen gasification of sewage sludge using thermochemical equilibrium and experimental data

Oxy-fuel combustion of refuse waste is gaining considerable attention as a viable CO2 negative technology that can enable the continued use of stationary combustion plants during the transition to renewable energy sources. Compared to fossil fuels, waste-derived fuels tend to be highly heterogeneous and to contain a greater amount of alkaline metals and chlorine. Therefore, experimental studies are mandatory to thoroughly elucidate refuse materials’ combustion and pollutant formation behavior. This paper presents an experimental investigation on the air and oxy-fuel combustion of solid recovered fuel at a 200 kWth circulating fluidized bed facility. In the course of two experimental campaigns, the effects of combustion atmosphere and temperature on pollutant formation (i.e., NOx, SO2, and HCl) and reactor hydrodynamics were systematically studied. In contrast to air-firing conditions, the experimental results showed that oxy-fuel combustion enhanced the volume concentration of NOx by about 50% while simultaneously decreasing the fuel-specific NOx emissions (by about 33%). The volume concentrations of SO2 and HCl were significantly influenced by the absorption capacity of calcium-containing ash particles, yielding corresponding values close to 10 and 200 ppmv at 871–880 °C under oxy-fuel combustion conditions. In addition, the analysis of hydrodynamic data revealed that smooth temperature profiles are indispensable to mitigate bed sintering and agglomeration risks during oxy-fuel operation. The results included in this study provide a valuable contribution to the database of experimental information on the oxy-fuel combustion of alternative fuels, which can be applied in future process model validations and scale-up studies.

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Oxy-Combustion of Solid Recovered Fuel in a Semi-Industrial CFB Reactor: On the Implications of Gas Atmosphere and Combustion Temperature


 The wet-flue-gas desulfurization (FGD) process plays an important role in removing water-soluble flue-gas components such as sulphur dioxide (SO2) and oxidized mercury compounds. Under the reducing environment of the FGD, there is the possibility of re-emission of the already absorbed mercury (Hg) to the gas phase, which may be diminished by the utilization of specific additives. In this study, the effect of two different additives on Hg re-emission from the aqueous phase and Hg partitioning in gypsum and filtrate of a lab-scale wet-limestone FGD is investigated. Furthermore, the behaviour of additives in the presence of different halides is studied. The studied additives are TMT 15® as a sulphidic precipitating agent, which forms non-soluble mercury compounds, and activated lignite (AL) as a carbon-based sorbent, which adsorbs Hg compounds from the aqueous phase. TMT 15® has no significant effect on SO2 absorption; on the other hand, addition of AL improves the SO2-removal efficiency by up to 30%. Using both additives, Hg re-emission is suppressed in all the experimented cases except for AL in the absence of halides, in which Hg re-emission shows no change. Thus, the need to form nucleophilic oxidized mercury compounds in the slurry for the adsorption of oxidized mercury on AL can be concluded. Usage of both additives improves Hg retention in the slurry to different extents. It is shown that, for the additive-free slurries, the Hg-adsorption capacity of the solid fraction of the slurry is the limiting parameter. Moreover, the utilization of both additives results in a significant increase in the Hg concentration of solid fraction. The correlation between redox potential and partitioning of Hg in the slurry is presented by comparing the change in the redox potential of slurries when additives are used.

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Effect of additives on mercury partitioning in wet-limestone flue-gas desulfurization

Vertical GeSn pin photodiodes with Sn content of 0 %, 2 % and 4.2 %, resp., grown with molecular beam epitaxy on thin Ge virtual substrates on Si are investigated by using the electrical and optoelectrical methods: direct current, light responsivity and optical high frequency (40 GHz). The vertical photodiodes were fabricated with a double mesa process. The mesa radii are between 5 μm and 80 μm. For a laser wavelength of 1550 nm an increase of the optical responsivities (84 mA/W-218 mA/W) for the vertical photodiodes with thin (300 nm) absorbers as function of the Sn content is found. The optical high frequency bandwidth of all photodiodes with 5 μm radius is above 40 GHz at enough reverse voltage [1].

High speed vertical GeSn photodiodes on Si

This work presents the limiting factors of fast Germanium p-i-n photodetectors for optical on-chip communication. The photodetectors are grown by molecular beam epitaxy on Silicon and Silicon on insulator substrates. On-wafer RF and optical RF measurements up to 40 GHz are performed at a wavelength of 1.55 μm. Different de-embedding procedures are used to obtain the amplitude and phase of the device impedance and the equivalent circuit description. An analysis of the reflection coefficient compared to the equivalent circuit explains the frequency characteristic and it is used to determine background doping of the intrinsic layer and the expansion of the space charge width. The optical bandwidth is measured for different bias voltages and background doping. The RC limitation of the detectors is shown and analyzed leading to adjusted parameters for high speed detectors at zero-bas.

M. Schmid

Papers

Modelling and simulation of fluidized bed steam-oxygen gasification of sewage sludge using thermochemical equilibrium and experimental data

Oxy-Combustion of Solid Recovered Fuel in a Semi-Industrial CFB Reactor: On the Implications of Gas Atmosphere and Combustion Temperature

Effect of additives on mercury partitioning in wet-limestone flue-gas desulfurization

High speed vertical GeSn photodiodes on Si

Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors