M
Michael Oehme
Researcher at University of Stuttgart
Publications - 201
Citations - 3868
Michael Oehme is an academic researcher from University of Stuttgart. The author has contributed to research in topics: Molecular beam epitaxy & Silicon. The author has an hindex of 27, co-authored 189 publications receiving 3540 citations.
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Journal ArticleDOI
Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
TL;DR: In this paper, a mesa-type detector with a diameter of 10 /spl mu/m, a resistance-capacitance-limited 3-dB bandwidth of 25.1 GHz at an incident wavelength of 1552 nm and zero external bias has been measured.
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GeSn p-i-n detectors integrated on Si with up to 4% Sn
Michael Oehme,M. Schmid,Mathias Kaschel,Martin Gollhofer,Daniel Widmann,E. Kasper,Jörg Schulze +6 more
TL;DR: GeSn heterojunction photodetectors on Si substrates were grown with Sn concentration up to 4, fabricated for vertical light incidence, and characterized in this paper, where the complete layer structure was grown by means of ultra low temperature (100 °C) molecular beam epitaxy.
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Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
Jürgen H. Werner,Michael Oehme,M. Schmid,Mathias Kaschel,A. Schirmer,Erich Kasper,Jörg Schulze +6 more
TL;DR: GeSn heterojunction p-i-n diodes with a Sn content of 0.5% are grown with a very low temperature growth step in order to suppress Sn surface segregation.
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Electrical spin injection and transport in germanium
Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland Kawakami,Kang L. Wang +9 more
TL;DR: In this article, the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge) was reported and the nonlocal magnetoresistance (MR) in n-type Ge was observable up to 225 K.
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Electrically pumped lasing from Ge Fabry-Perot resonators on Si.
R. Koerner,Michael Oehme,Martin Gollhofer,Marc Schmid,Konrad Kostecki,Stefan Bechler,Daniel Widmann,Erich Kasper,Joerg Schulze +8 more
TL;DR: Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices has been observed, and electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1660 nm and 1700 nm, which fits the theoretically predicted behavior for the n- type Ge material system.