M
M. T. Currie
Publications - 3
Citations - 23
M. T. Currie is an academic researcher. The author has contributed to research in topics: Electron mobility & Leakage (electronics). The author has an hindex of 3, co-authored 3 publications receiving 22 citations.
Papers
More filters
Growth and characterization of high-Ge content SiGe virtual substrates
M. Erdtmann,M. Carroll,J. Carlin,T. A. Langdo,R. Westhoff,C. Leitz,V. K. Yang,M. T. Currie,A. Lochtefeld,K. Petrocelli,C. J. Vineis,H. Badawi,M. T. Bulsara,S. Ringel,C. L. Andre,A. Khan,Mantu K. Hudait +16 more
TL;DR: Si 1-x Ge x virtual substrates with relaxed graded buffers grown in industrial LPCVD reactors on 150 mm and 200 mm diameter wafers are presented with compositions up to x = 1.4 as mentioned in this paper.
Proceedings ArticleDOI
Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs
J.G. Fiorenza,G. Braithwaite,C. Leitz,M. T. Currie,Z.Y. Cheng,V. K. Yang,T. A. Langdo,John A. Carlin,Mark Somerville,A. Lochtefeld,H. Badawi,M. T. Bulsara +11 more
TL;DR: In this paper, the authors investigated off-state current leakage in strained silicon NMOSFETs built on supercritical thickness strained silicon films and proposed a simple conceptual model for the offstate leakage: the leakage is caused by enhanced dopant diffusion near misfit dislocations.
Proceedings ArticleDOI
Advanced SiGe-free Strained Si on Insulator Substrates: Thermal Stability and Carrier Mobility Enhancement
T. A. Langdo,M. Erdtmann,Christopher W. Leitz,M. T. Currie,A. Lochtefeld,Z.Y. Cheng,J. Carlin,V. K. Yang,Christopher J. Vineis,C. Major,G. Braithwaite,H. Badawi,M. T. Bulsara +12 more