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M

M. T. S. Nair

Researcher at National Autonomous University of Mexico

Publications -  117
Citations -  4773

M. T. S. Nair is an academic researcher from National Autonomous University of Mexico. The author has contributed to research in topics: Thin film & Chemical bath deposition. The author has an hindex of 40, co-authored 116 publications receiving 4359 citations.

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Chemically Deposited Sb2 S 3 and Sb2 S 3 ‐ CuS Thin Films

TL;DR: In this paper, thin films of antimony sulfide have been deposited from chemical baths containing antimony trichloride and sodium thiosulfate maintained at 10 C. Upon annealing in nitrogen at 300 C for 1 h, the films become photosensitive with photo-to-dark-current ratio of two to three orders of magnitude at 2 kW/m{sup 2} tungsten halogen radiation.
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Cu2SnS3 and Cu4SnS4 Thin Films via Chemical Deposition for Photovoltaic Application

TL;DR: In this paper, thin films of copper sulfide (CuS, 200 nm thick) were deposited over thin film of tin sulfide by sequential chemical deposition, and the grazing incidence X-ray diffraction analysis of these layers established the formation of thin films with ternary composition.
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Copper selenide thin films by chemical bath deposition

TL;DR: In this article, the structural, optical, and electrical properties of thin films (0.05 to 0.25μm) of copper selenide obtained from chemical baths using sodium selenosulfate or N,N-dimethylselenourea as a source of selenides ions were reported.
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Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

TL;DR: In this paper, the photovoltaic behavior of the structure varies with heating: V oc ≈ 400mV and J sc 2, when heated at 423k in air, but V Oc decreases and J SC 2 increases when heated in higher temperatures.
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Antimony sulfide thin films in chemically deposited thin film photovoltaic cells

TL;DR: In this article, Antimony sulfide thin films of thickness ≈500nm have been deposited on glass slides from chemical baths constituted with SbCl3 and sodium thiosulfate and the differences in the film thickness and improvement in the crystallinity and photoconductivity upon annealing the film in nitrogen are presented.