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M

M. T. S. Nair

Researcher at National Autonomous University of Mexico

Publications -  117
Citations -  4773

M. T. S. Nair is an academic researcher from National Autonomous University of Mexico. The author has contributed to research in topics: Thin film & Chemical bath deposition. The author has an hindex of 40, co-authored 116 publications receiving 4359 citations.

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Antimony sulfide selenide prototype photovoltaic modules surpassing 4% conversion efficiency under the sun – A technological outlook

TL;DR: In this article, the performance under the sun, at intensity 1000 W/m2, of prototype photovoltaic modules of antimony sulfide selenide thin films, Sb2S1.06Se1.94, with optical bandgap, 1.35 V, was discussed.
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Structural and opto-electronic properties of chemically deposited CuxS thin film and the precipitate

TL;DR: In this paper, the structural and opto-electronic properties of solution grown CuxS thick films for solar cell applications are reported X-ray diffraction precipitate used for screen printing of CauxS thin films.
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Formation of a ZnSe:? heterostructure by air annealing ZnSe-In thin film

TL;DR: In this article, a thin indium indium approximately 10 nm thick was deposited by thermal evaporation onto a chemically deposited ZnSe thin film of thickness, which resulted in the formation of a -O heterostructure.
Proceedings ArticleDOI

Critical Analysis Of The Solar Control Performance Of Chemically Deposited Metal Chalcogenide Thin Films

TL;DR: In this article, the possibilities of producing large area coatings with very low capital investment is an inherent attraction of chemical bath deposition technique, which makes the chemically deposited metal chalcogenide films as a low-capital alternative to the commercially available magnetron sputtered metallic coatings in the production of solar control glazings.
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Thin film Sn2S3 via chemical deposition and controlled heating – Its prospects as a solar cell absorber

TL;DR: In this article, the formation of Sn2S3 thin film of 360nm in thickness by heating chemically deposited tin sulfide thin films at 450°C during 30-45 min in presence of sulfur at a pressure, 75 Torr of nitrogen.