A 70GHz CMOS harmonic injection-locked divider (HILD) is presented, where a third-harmonic mixer is realized by a differential-voltage-driven MOSFET. The chip is fabricated in a 6M 90nm CMOS process. A maximum operating frequency of 71.6GHz with a locking range of 12% at a supply voltage of 0.5V is measured. The chip consumes 2.75mW

70GHz CMOS Harmonic Injection-Locked Divider

In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.

3–10-GHz Ultra-Wideband Low-Noise Amplifier Utilizing Miller Effect and Inductive Shunt–Shunt Feedback Technique

32.8 70GHz CMOS Harmonic Injection-Locked Divider

Using the concept of traveling-wave gain stages, novel GaAs pseudomorphic high electron-mobility transistor monolithic-microwave integrated-circuit (MMIC) distributed amplifiers (DAs) are demonstrated to achieve high gain and over several octaves of bandwidth performance simultaneously for microwave and millimeter-wave frequency applications. The cascaded single-stage distributed amplifier (CSSDA) is used as traveling-wave gain stages to improve the gain performance of the conventional distributed amplifier (CDA). By adopting the low-pass filter topology between the CDA and CSSDA and tuning the gain shape of CDA and CSSDA separately, a broad-band and high-gain DA, called CDA-CSSDA-2, was accomplished. The detailed design equations are derived for the broad-band matching design of this CDA-CSSDA-2. Two other MMICs, namely, a two-stage CSSDA called 2-CSSDA, and another two-stage design called CDA-CSSDA-1, are also included in this paper. This CDA-CSSDA-2 achieves 22/spl plusmn/1.5-dB small-signal gain from 0.1 to 40 GHz with a chip size of 1.5/spl times/2 mm/sup 2/. It also produces a gain-bandwidth product of 503 GHz, which is the highest among all reported GaAs-based DAs. The flat group delay also demonstrates the feasibility of this design for future digital optical communications and broad-band pulse applications.

Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages

An injection-locked frequency divider (ILFD) with variable division ratio, controlled by the input offset voltage, was realized using a 0.13 /spl mu/m CMOS technology. In this report, the controllable division ratios were made from 2 up to 16 with an input AC signal of 10 GHz, by changing the input DC offset voltages. This divider also performs division ratios of 2, 4, 6 and 8 with a wide-locking range up to 20 GHz at 2.5 GHz self-oscillation. The DC supplied voltage of this circuit is only 2 V and the dividing capability can reach 20 GHz.

20 GHz CMOS injection-locked frequency divider with variable division ratio

A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.

A novel 75 GHz InP HEMT dynamic divider

Over the last five years, the 0.1 /spl mu/m gate length indium phosphide high electron mobility transistor (InP HEMT) has been taken from first demonstration to a high-yield, manufacturable monolithic microwave integrated circuit (MMIC) process. Discrete InP HEMT devices have shown transconductances (g/sub m/) as high as 1740 mS/mm and cutoff frequencies (f/sub T/) up to 340 GHz and thus are extremely attractive devices for high gain amplifiers in the 30-100 GHz range. For very broadband instrumentation applications, this process is used to realize a fully-integrated, three-stage, shunt-feedback amplifier with 17 dB gain from 100 MHz to 70 GHz, a gain-bandwidth product the authors believe to be the highest reported for any amplifier. In comparison to distributed amplifiers typically used for such broadband applications, this amplifier has higher gain, better low-frequency response, uses less dc power, and yet has good output power capability. Potentially low-cost MMICs of this type could open the millimeter-wave frequencies to commercial applications. >

M.V. Le

Papers

A novel 75 GHz InP HEMT dynamic divider

A 17 dB gain, 0.1-70 GHz InP HEMT amplifier IC