Proceedings ArticleDOI
A novel 75 GHz InP HEMT dynamic divider
C.J. Madden,D.R. Snook,R.L. Van Tuyl,M.V. Le,L.D. Nguyen +4 more
- pp 137-140
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TLDR
In this paper, a dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator using a simple pumped-delay model of a two-stage ring oscillator.Abstract:
A novel dynamic frequency divider IC is realized by injection locking a broadly tunable push-pull oscillator. The injection locking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 /spl mu/m gate-length InP HEMT process. The first covers 15-68 GHz while the second operates over the entire band from 50 to 75 GHz.read more
Citations
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Proceedings ArticleDOI
70GHz CMOS Harmonic Injection-Locked Divider
K. Yamamoto,Minoru Fujishima +1 more
TL;DR: A 70GHz CMOS harmonic injection-locked divider (HILD) is presented, where a third-harmonic mixer is realized by a differential-voltage-driven MOSFET.
Proceedings ArticleDOI
20 GHz CMOS injection-locked frequency divider with variable division ratio
TL;DR: In this article, an injection-locked frequency divider with variable division ratio, controlled by the input offset voltage, was realized using a 0.13 /spl mu/m CMOS technology.
Proceedings ArticleDOI
82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs
Katsuyoshi Washio,Eiji Ohue,Katsuya Oda,R. Hayami,Masamichi Tanabe,Hiromi Shimamoto,T. Harada,M. Kondo +7 more
TL;DR: In this article, a self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistors (HBTs) are fabricated in selfaligned SEG SiGe HBTs with a 122 GHz cutoff frequency, a 163 GHz maximum oscillation frequency, and 5.5 ps ECL gate delay.
Proceedings ArticleDOI
A 79 GHz dynamic frequency divider in SiGe bipolar technology
TL;DR: This regenerative frequency divider exploits the high-speed potential of SiGe technologies to combine high maximum frequency with operation over wide frequency range.
References
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Journal ArticleDOI
Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
U.K. Mishra,April S. Brown,S.E. Rosenbaum,C.E. Hooper,M.W. Pierce,M.J. Delaney,S. Vaughn,K. White +7 more
TL;DR: In this paper, the millimeter-wave performance of high-electron-mobility transistors (HEMTs) with 0.2- mu m and 0.1-mu m-long gates on material grown by molecular-beam epitaxy on semi-insulating InP substrates was investigated.
Journal ArticleDOI
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
TL;DR: In this paper, a static divide-by-4 frequency divider operating at 39.5 GHz with a corresponding gate delay of 12.6 ps was implemented using InP-based HBT technology.
Proceedings ArticleDOI
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
TL;DR: In this article, a static divide-by-four frequency divider operating at 395 GHz input frequency is reported, with a very low turn-on voltage of about 07 V at collector current density of 5*10/sup 4/ A/cm/sup 2/
Journal ArticleDOI
Residual phase noise measurements of VHF, UHF, and microwave components
TL;DR: In this article, the results of residual phase noise measurements on a number of VHF, UHF, and microwave amplifiers, both silicon (Si) bipolar junction transistor (BJT) and gallium arsenide (GaAs) field effect transistor (FET) based, electronic phase shifters, frequency dividers and multipliers, etc., which are commonly used in a wide variety of frequency source and synthesizer applications are presented.