Evaluation of cracking efficiency of As and P precursors

The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures

The low pressure decomposition of tertiarybutylbis(dimethylamino) phosphine, (t-Bu)P(NMe2)2, (TBBDMAP), has been studied on quartz and deposited GaP and InP surfaces. This new phosphorus precursor has been found to pyrolyze on quartz surfaces at much lower temperatures than the related compounds tertiarybutylphosphine, (t-Bu)PH2, (TBP) and tris(dimethylamino)phosphorus, P(NMe2)3, (TDMAP). In contrast to the results obtained for TDMAP, GaP and InP surfaces decrease the decomposition temperature of TBBDMAP only slightly. The TBBDMAP reaction products were dimethylamine, methylmethyleneimine, and isobutylene, consistent with previous pyrolysis studies of TBP and TDMAP.

Low-pressure pyrolysis studies of a new phosphorus precursor: Tertiarybutylbis(dimethylamino)phosphine

The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy (CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH2 and C4H9 radicals. These undergo subsequent reactions to form the stable products C4H8, PH3 and H2, with smaller amounts of P and P2 being produced. The production of the sub-hydride PH2 using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing the amount of carbon incorporated into the growing epitaxial layer.

Pyrolysis of tertiarybutylphosphine at low pressure

CBE growth of InP using BPE and TBP: a comparative study

Growth of InP in chemical beam epitaxy with high purity tertiarybutylphosphine

This paper compares tertiarybutylphosphine (TBP), and 1,2 bis-phosphinoethane (BPE) as phosphorus precursors for the growth of InP in chemical beam epitaxy. The thermal decomposition of both sources in a low pressure cracking cell produces dimer P2 and tetramer P4 species. The P2 to P4 ratio is a function of the cracker temperature θ c , the dimer P2 is the dominant species for θ c = 800 ° C . High quality InP layers, showing good surface morphology, were grown using low values of the V to III flux ratio R V/III , leading to a very low consumption of the group V product. The lower R V/III value ( R V/III ⋍ 3 ) is obtained with the BPE molecule, which contains two phosphorus atoms. 77 K Hall mobility values of 62 500 cm2/Vs and 26 500 cm2/Vs were obtained using TBP and BPE respectively and triethylindium as group III source. With both phosphorus sources, background carrier density levels as low as N D − N A 15 cm −3 are obtained.

Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane

http://manuscript.elsevier.com/S0022024822001336/pdf/S0022024822001336.pdf

M. Zahzouh

Papers

Growth of InP in chemical beam epitaxy with high purity tertiarybutylphosphine

Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane

Equiaxed grain structure formation during directional solidification of a refined Al-20wt.%Cu alloy: in situ analysis of temperature gradient effects

Anti-corrosion performance of dehydroacetic acid thiosemicarbazone on XC38 carbon steel in an acidic medium

Microstructural, Mechanical and Corrosion Characterizations of Borided Cast Irons Formed by a Recycled Boriding Agent