M
Makoto Nagashima
Researcher at Applied Materials
Publications - 13
Citations - 372
Makoto Nagashima is an academic researcher from Applied Materials. The author has contributed to research in topics: Wafer & Silicon. The author has an hindex of 8, co-authored 13 publications receiving 372 citations.
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Patent
Cleaning method for semiconductor wafer processing apparatus
TL;DR: In this paper, an improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described, which comprises the treatment of fluorine residues in the CVD-deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such residues with one or more reducing gases which will react with the residues to form gaseous or solid reaction products or a mixture of same.
Patent
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
TL;DR: In this article, a two-step process is described for forming a silicon oxide layer over a stepped surface of a semiconductor wafer while inhibiting the formation of voids in the oxide layer.
Patent
Chemical vapor deposition method and apparatus therefore
TL;DR: In this paper, the carrier gas is heated by a gas heater before entering the three-way valve to generate a source gas by contacting a high-temperature carrier gas which flows there through and becomes mixed with the source gas.
Patent
Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
TL;DR: In this paper, a composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two-step process, which is characterized by the absence of discernible voids and a surface which is resistant to loss of boron in subsequent etching.
Patent
Boron phosphorus silicate glass composite layer on semiconductor wafer
TL;DR: In this paper, a composite BPSG insulating and planarizing layer is formed over stepped surfaces of a semiconductor wafer by a novel two-step process, which is characterized by the absence of discernible voids and a surface which is resistant to loss of boron in subsequent etching.