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Manuj Rathor
Researcher at Spansion
Publications - Â 5
Citations - Â 453
Manuj Rathor is an academic researcher from Spansion. The author has contributed to research in topics: Electrode & Layer (electronics). The author has an hindex of 3, co-authored 5 publications receiving 443 citations.
Papers
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Proceedings ArticleDOI
Non-volatile resistive switching for advanced memory applications
An Chen,Sameer Haddad,Yi-Ching Wu,Tzu-Ning Fang,Zhida Lan,Steven Avanzino,Suzette K. Pangrle,Matthew Palo Alto Buynoski,Manuj Rathor,Wei Cai,Nicholas H. Tripsas,Colin S. Bill,M. VanBuskirk,M. Taguchi +13 more
TL;DR: In this article, a nonvolatile resistive switching mechanism based on trap-related space charge-limited-conduction (SCLC) is proposed for high density and low cost memory applications.
Patent
Diode and resistive memory device structures
TL;DR: In an electronic device, a diode and a resistive memory device are connected in series as discussed by the authors, and the diode may take a variety of forms, including oxide or silicon layers.
Patent
Metal-insulator-metal-insulator-metal (MIMIM) memory device
TL;DR: In this paper, the authors present a memory device with first and second electrodes, a metal layer between the first and the second electrodes and a first oxide layer between and in contact with the first insulating layer and the metal layer.
Patent
Test structures for development of metal-insulator-metal (MIM) devices
Steven Avanzino,Suzette K. Pangrle,Manuj Rathor,An Chen,Sameer Haddad,Nicholas H. Tripsas,Matthew Palo Alto Buynoski +6 more
TL;DR: In this article, a conductor is provided, overlying a substrate and an electronic device overlies a portion of the conductor and includes a first electrode connected to the conductor, a second electrode, and an insulating layer between the first and second electrodes.
Patent
Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
TL;DR: In this paper, a gettering layer is provided on and in contact with the first electrode, acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H2.