Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin‐dependent electron scattering due to spin canting of the manganese oxide.

31p-S-4 Giant Magnetoresistance in Magnetic Manganese Oxide with Intrinsic Antiferromagnetic Spin Structure

Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Recommended Methods to Study Resistive Switching Devices

Ceria is an important component in three-way catalysts for the treatment of automobile exhaust gases owing to its ability to store and release oxygen, a property known as the oxygen storage capacity. Much effort has been focused on increasing the OSC of ceria, and one avenue of exploration is the ability to fabricate CeO(2)-based catalysts, which expose reactive surfaces. Here we show how models for a polycrystalline CeO(2) thin film, which expose the (111), (110), and dipolar (100) surfaces, can be synthesized. This is achieved by supporting the CeO(2) thin film on an yttrium-stabilized zirconia substrate using a simulated amorphization and recrystallization strategy. In particular, the methodology generates models which reveal the atomistic structures present on the surface of the reactive faces and provides details of the grain-boundary structures, defects (vacancies, substitutionals, and clustering), and epitaxial relationships. Such models are an important first step in understanding the active sites at the surface of a catalytic material.

Atomistic models for CeO2(111), (110), and (100) nanoparticles, supported on yttrium-stabilized zirconia

The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

We review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this treatment is mainly on high-κ dielectric, ferroelectric, magnetic, and multiferroic materials. Also, we consider ferrimagnetic oxides in the context of the new, rapidly developing field of negative-index metamaterials. This review is motivated by the recent resurgence of interest in complex oxides owing to their coupling of electrical, magnetic, thermal, mechanical, and optical properties, which make them suitable for a wide variety of applications, including heat, motion, electric, and magnetic sensors; tunable and compact microwave passive components; surface acoustic wave devices; nonlinear optics; and nonvolatile memory, and pave the way for designing multifunctional devices and unique applications in spintronics and negative refraction-index media. For most of the materials treated here, structural and physical propertie...

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

LSMO thin films with high metal–insulator transition temperature on buffered SOI substrates for uncooled microbolometers

Epitaxial LSMO films grown on MgO single crystalline substrates

Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

Y2O3 thin films were deposited by radio frequency (rf) magnetron sputtering on Si substrates. The influence of the deposition parameters – substrate temperatures and post-annealing treatment – on the structural properties is studied by X-ray diffraction (XRD) technique, ellipsometric measurements, transmission electron microscopy (TEM) and atomic force microscopy (AFM) observations. The Y2O3 layers with (1 1 1) oriented growth perpendicular to the film surface have been obtained on the Si(1 1 1) as well as on the Si(1 0 0) substrates. TEM observations reveal an existence of voids in the polycrystalline Y2O3 layers probably originating from the interaction of the metalllic Y layer with the SiO2 native layer. The layers consist of randomly oriented grains in the film plane with a maximum size of 30 nm. The existence of the voids has also been proved by ellipsometric evaluations. The expected improvement of the structural properties such as better crystallinity and surface smoothness has not been registered upon post-deposition annealing treatment. The information about the microstructure of the Y2O3 films will be used to assess the suitability of this material for high-κ gate dielectric applications.

Marianna Španková

Papers

Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

LSMO thin films with high metal–insulator transition temperature on buffered SOI substrates for uncooled microbolometers

Epitaxial LSMO films grown on MgO single crystalline substrates

Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

Structural properties of Y2O3 thin films grown on Si(100) and Si(111) substrates